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Advancing Room-Temperature Magnetic Semiconductors with Organic Radical Charge Transfer Cocrystals.
Adv Mater
January 2025
Key Laboratory of Organic Integrated Circuits, Ministry of Education, Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University, Tianjin, 300072, P. R. China.
Developing purely organic room-temperature magnetic semiconductors has been a long-sought goal in the material community toward the simultaneous control of spin and charge. Organic cocrystals, known for their structural versatility and multifunctionality, are ideal candidates for these magnetoelectric coupling applications. However, organic room-temperature magnetic semiconductor cocrystals have rarely been reported, and their mechanisms remain poorly understood due to the complexity of cocrystal structures.
View Article and Find Full Text PDFNanomagnetism Triggering Carriers Double-Resistance Conduction and Excellent Flexible Thermoelectrics.
Adv Mater
January 2025
State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan, 430070, China.
Nanomagnetism may enable electrical conductivity and Seebeck coefficient to be decoupled and can potentially lead to remarkable enhancements in thermoelectric (TE) performance, however, their physical mechanisms have not been explored. Herein, it is shown that the nanomagnetism from Fe and FeO nanoparticles embedded in BiSbTe/epoxy flexible films can lead to the carriers splitting into spin-up and spin-down conductive branches with different resistances and mobilities due to the exchange interaction between the spin of carriers and the nanomagnetism. The double-resistance conduction of carriers may well explain the decoupling of electrical conductivity and Seebeck coefficient and their simultaneous enhancements in the thermo-electro-magnetic flexible films.
View Article and Find Full Text PDFInterfacial Strain-Driven Large Topological Hall Effects in Supermalloy Thin Films with Noncoplanar Spin Textures.
ACS Appl Mater Interfaces
January 2025
School of Physical Sciences, Indian Association for the Cultivation of Science, 2A & 2B Raja S. C. Mullick Road, Kolkata 700032, India.
Materials exhibiting topological transport properties, such as a large topological Hall resistivity, are crucial for next-generation spintronic devices. Here, we report large topological Hall resistivities in epitaxial supermalloy (NiFeMo) thin films with [100] and [111] orientations grown on single-crystal MgO (100) and AlO (0001) substrates, respectively. While X-ray reciprocal maps confirmed the epitaxial growth of the films, X-ray stress analyses revealed large residual strains in the films, inducing tetragonal distortions of the cubic NiFeMo unit cells.
View Article and Find Full Text PDFVarious Sizes and Shapes of Mixed-Anion Fe(NHtrz)(BF)(SiF)@SiO Nanohybrid Particles Undergoing Spin Crossover Just Above Room Temperature.
Nanomaterials (Basel)
January 2025
Laboratoire de Chimie de Coordination, CNRS & Université de Toulouse (UPS, INP), 31077 Toulouse, France.
Spin crossover (SCO) iron (II) coordination compounds in the form of nanohybrid SCO@SiO particles were prepared using a reverse micelles technique based on the TritonX-100/cyclohexane/water ternary system. Tetraethyl orthosilicate (TEOS) acts as precursor of both the SiF counter-anion and SiO to obtain Fe(NHtrz)(BF)(SiF)@SiO nanoparticles with different sizes and morphologies while modifying the TEOS concentration and reaction time. The adjustable mixed-anion strategy leads to a range of quite scarce abrupt spin crossover behaviors with hysteresis just above room temperature (ca.
View Article and Find Full Text PDFBuffer-Less Gallium Nitride High Electron Mobility Heterostructures on Silicon.
Adv Mater
January 2025
Department of Materials Science and Metallurgy, University of Cambridge, Cambridge, CB3 0FS, UK.
Thick metamorphic buffers are considered indispensable for III-V semiconductor heteroepitaxy on large lattice and thermal-expansion mismatched silicon substrates. However, III-nitride buffers in conventional GaN-on-Si high electron mobility transistors (HEMT) impose a substantial thermal resistance, deteriorating device efficiency and lifetime by throttling heat extraction. To circumvent this, a systematic methodology for the direct growth of GaN after the AlN nucleation layer on six-inch silicon substrates is demonstrated using metal-organic vapor phase epitaxy (MOVPE).
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