Picosecond acoustic pulses generated by femtosecond laser excitation of a metal film induce a transient current with subnanosecond rise time in a GaAs/Au Schottky diode. The signal consists of components due to the strain pulse crossing the edge of the depletion layer in the GaAs and also the GaAs/Au interface. A theoretical model is presented for the former and is shown to be in very good agreement with the experiment.
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http://dx.doi.org/10.1103/PhysRevLett.106.066602 | DOI Listing |
Micromachines (Basel)
January 2025
Power Solutions Group, Onsemi, Scottsdale, AZ 85250, USA.
Trench MOS Barrier Schottky (TMBS) rectifiers offer superior static and dynamic electrical characteristics when compared with planar Schottky rectifiers for a given active die size. The unique structure of TMBS devices allows for efficient manipulation of the electric field, enabling higher doping concentrations in the drift region and thus achieving a lower forward voltage drop (VF) and reduced leakage current (IR) while maintaining high breakdown voltage (BV). While the use of trenches to push electric fields away from the mesa surface is a widely employed concept for vertical power devices, a significant gap exists in the analytical modeling of this effect, with most prior studies relying heavily on computationally intensive numerical simulations.
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January 2025
Department of Chemical and Pharmaceutical Sciences, University of Trieste Via L. Giorgieri 1 Trieste 34127 Italy
Electrical performances of a biphenyl-derived amido Schiff base ligand L and its dinuclear Al(iii) complex (complex 1) were investigated in a metal-semiconductor (MS) junction. Electrical studies revealed that complex 1 significantly enhanced the electrical conductivity and improved the characteristics of a Schottky barrier diode (SBD). The - characteristics demonstrated that complexation of ligand L with Al(iii) ion increased the conductivity by two orders of magnitude (conductivity of L = 1.
View Article and Find Full Text PDFACS Appl Electron Mater
January 2025
Electrical Engineering Division, Engineering Department, University of Cambridge, Cambridge CB3 0FA, U.K.
Nanoscale semiconductors offer significant advantages over their bulk semiconductor equivalents for electronic devices as a result of the ability to geometrically tune electronic properties, the absence of internal grain boundaries, and the very low absolute number of defects that are present in such small volumes of material. However, these advantages can only be realized if reliable contacts can be made to the nanoscale semiconductor using a scalable, low-cost process. Although there are many low-cost "bottom-up" techniques for directly growing nanomaterials, the fabrication of contacts at the nanoscale usually requires expensive and slow techniques like e-beam lithography that are also hard to scale to a level of throughput that is required for commercialization.
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January 2025
National Institute of Technology, Uttarakhand, Srinagar (Garhwal) 246174, India.
A mechanically stable and thermo-irreversible supramolecular Ni(II)-selective gel () has been developed by utilizing the N,O-donor Schiff base (E)-1-((4-(diethylamino)phenylimino)-methyl)naphthalen-2-ol () gelator and EtN in binary THF:CHOH (1:1) solutions at room temperature (rt). Metallogel has been characterized by spectral and analytical techniques, i.e.
View Article and Find Full Text PDFSmall
January 2025
Key Laboratory of Automobile Materials of Ministry of Education and School of Materials Science and Engineering, Jilin University, Changchun, 130012, P. R. China.
Constructing a solid solution is an effective strategy for regulating the properties of composite organic semiconductors. However, there presents significant challenges in fabrication and understanding of organic solid-solution semiconductors. In this study, infinite solid-solution semiconductors are successfully achieved by integrating rod-like organic molecules, thereby overcoming the limitations of current organic composite semiconductors.
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