High-spin polaron in lightly doped CuO2 planes.

Phys Rev Lett

Department of Physics and Astronomy, University of British Columbia, Vancouver, British Columbia, Canada V6T 1Z1.

Published: January 2011

We derive and investigate numerically a minimal yet detailed spin-polaron model that describes lightly doped CuO2 layers. The low-energy physics of a hole is studied by total-spin-resolved exact diagonalization on clusters of up to 32 CuO2 unit cells, revealing features missed by previous studies. In particular, spin-polaron states with total spin 3/2 are the lowest eigenstates in some regions of the Brillouin zone. In these regions, and also at other points, the quasiparticle weight is identically zero indicating orthogonal states to those represented in the one electron Green's function. This highlights the importance of the proper treatment of spin fluctuations in the many-body background.

Download full-text PDF

Source
http://dx.doi.org/10.1103/PhysRevLett.106.036401DOI Listing

Publication Analysis

Top Keywords

lightly doped
8
doped cuo2
8
high-spin polaron
4
polaron lightly
4
cuo2 planes
4
planes derive
4
derive investigate
4
investigate numerically
4
numerically minimal
4
minimal detailed
4

Similar Publications

Silicon heterojunction (SHJ) solar cells, as one of the most promising passivated contact solar cell technologies of the next generation, have the advantages of high conversion efficiency, high open-circuit voltage, low-temperature coefficient, and no potential-induced degradation. For the single-side rear-emitter SHJ solar cells, the n-type carrier selective layer, which serves as the light-incident side, plays a pivotal role in determining the performance of heterojunction devices. Consequently, a superior n-doped layer should exhibit high optical transmittance and minimal optical absorption, along with a substantial effective doping level to guarantee the formation of dark conductivity (σ) and electron-transport capacity.

View Article and Find Full Text PDF

Ultrawide Bandgap Diamond/ε-GaO Heterojunction pn Diodes with Breakdown Voltages over 3 kV.

Nano Lett

January 2025

Zhejiang Provincial Engineering Research Center of Energy Optoelectronic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China.

Robust bipolar devices based on exclusively ultrawide bandgap (UWBG) semiconductors are highly desired for advanced power electronics. The heterojunction strategy has been a prevailing method for fabricating a bipolar device due to the lack of effective bipolar doping in the same UWBG material. Here, we demonstrate a unique heterojunction design integrating the p-type diamond and n-type ε-GaO that achieves remarkable breakdown voltages surpassing 3000 V.

View Article and Find Full Text PDF

Anomalous Frequency and Temperature Dependent Scattering in the Dilute Metallic Phase in Lightly Doped SrTiO_{3}.

Phys Rev Lett

September 2024

Institute for Quantum Matter and Department of Physics and Astronomy, John Hopkins University, Baltimore, Maryland 21218, USA.

The mechanism of superconductivity in materials with aborted ferroelectricity and its emergence out of a dilute metallic phase in systems like doped SrTiO_{3} is an outstanding issue in condensed matter physics. This dilute metal has anomalous properties that are both similar and different to those found in the normal state of other unconventional superconductors. For instance, T^{2} resistivity can be found at densities that are too small to allow current decay through electron-electron scattering.

View Article and Find Full Text PDF

Room temperature 6 μm intraband cascade electroluminescence (EL) is demonstrated with lightly n-doped HgTe colloidal quantum dots of ∼8 nm diameter deposited on interdigitated electrodes in a metal-insulator-metal device. With quantum dot films of ∼150 nm thickness made by solid-state-ligand-exchange, the devices emit at 1600 cm-1 (6.25 μm), with a spectral width of 200 cm-1, determined by the overlap of the 1Se-1Pe intraband transition of the quantum dots and the substrate photonic resonance.

View Article and Find Full Text PDF

An electron transport layer (ETL) for highly efficient perovskite solar cells (PSCs) should exhibit superior electrical transport properties and have its band levels aligned with interfacing layers to ensure efficient extraction of photo-generated carriers. Nitrogen-doped TiO (TiO:N) is considered a promising ETL because it offers higher electrical conductivity compared to conventional ETLs made from spray-pyrolyzed TiO. However, the application of highly doped TiO:N in PSCs is often limited by the misalignment of energy band levels with adjacent layers and reduced optical transparency.

View Article and Find Full Text PDF

Want AI Summaries of new PubMed Abstracts delivered to your In-box?

Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!