A ternary type-I Si clathrate K(8)Ga(8)Si(38) has been revealed to be an indirect band gap semiconducting material with an energy gap (E(g)) of approximately 0.10 eV, which is much smaller than the calculated E(g) value that is 0.15 eV wider than E(g) of elemental Si with the diamond-type structure.
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| http://dx.doi.org/10.1039/c1dt10071h | DOI Listing |
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