We present a systematic experimental and theoretical study of the two-phonon (2D) Raman scattering in graphene under uniaxial tension. The external perturbation unveils that the 2D mode excited with 785 nm has a complex line-shape mainly due to the contribution of two distinct double resonance scattering processes (inner and outer) in the Raman signal. The splitting depends on the direction of the applied strain and the polarization of the incident light. The results give new insight into the nature of the 2D band and have significant implications for the use of graphene as reinforcement in composites since the 2D mode is crucial to assess how effectively graphene uptakes an applied stress or strain.
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http://dx.doi.org/10.1021/nn103493g | DOI Listing |
ACS Appl Mater Interfaces
August 2023
IHP - Leibniz-Institut für innovative Mikroelektronik, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany.
For the fabrication of modern graphene devices, uniform growth of high-quality monolayer graphene on wafer scale is important. This work reports on the growth of large-scale graphene on semiconducting 8 inch Ge(110)/Si wafers by chemical vapor deposition and a DFT analysis of the growth process. Good graphene quality is indicated by the small FWHM (32 cm) of the Raman 2D band, low intensity ratio of the Raman D and G bands (0.
View Article and Find Full Text PDFACS Omega
February 2023
School of Semiconductor and Chemical Engineering, Jeonbuk National University, Jeonju 54896, Republic of Korea.
A new graphene quantum dot (GQD) fabrication method is presented, which employs a lithographic approach based on self-assembled Au nanoparticles formed by solid-state dewetting. The GQDs are formed by the patterned etching of a graphene layer enabled by Au nanoparticles, and their size is controllable through that of the Au nanoparticles. GQDs are fabricated with four different diameters: 12, 14, 16, and 27 nm.
View Article and Find Full Text PDFRSC Adv
August 2022
Department of Physics, Faculty of Science and Technology, Thammasat University Pathum Thani 12120 Thailand
Monolayer graphene has excellent electrical properties especially a linear dispersion in the band structure at the -point in the Brillouin zone. However, its electronic transport properties can be degraded by surface roughness and attachment of charge impurities. Although multilayer graphene can reduce the surface roughness and attachment of charge impurities, the increase in the number of graphene layers can degrade the electronic transport properties due to interlayer interactions.
View Article and Find Full Text PDFNanomaterials (Basel)
September 2022
Department of Physics, Saint Louis University, St. Louis, MO 63103, USA.
The mechanical properties of engineered van der Waals (vdW) 2D materials and heterostructures are critically important for their implementation into practical applications. Using a non-destructive Raman spectroscopy approach, this study investigates the strain evolution of single-layer graphene (SLGr) and few-layered boron nitride/graphene (FLBN/SLGr) heterostructures. The prepared 2D materials are synthesized via chemical vapor deposition (CVD) method and then transferred onto flexible polyethylene terephthalate (PET) substrates for subsequent strain measurements.
View Article and Find Full Text PDFMicron
September 2022
ILIT RAS - Branch of the FSRC "Crystallography and Photonics" RAS, Shatura, Moscow region 140700, Russia.
Vertically aligned multi-walled carbon nanotubes (MWCNTs) are attractive for use in nanoelectronics, nanosensors, electrodes for energy storage and harvesting devices, composites, weaving yarns and many other devices. However, in order to reach practical relevance in these applications, the vertically aligned MWCNTs must be dense and sufficient height. Fulfilling those requirements is often challenging.
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