An on-chip approach for fabricating ferromagnetic/semiconductor-nanotip heterojunctions is demonstrated. The high-density array of Si nanotips (SiNTs) is employed as a template for depositing La(0.7)Sr(0.3)MnO(3) (LSMO) rods with a pulsed-laser deposition method. Compared with the planar LSMO/Si thin film, the heterojunction shows a large enhancement of room temperature magnetoresistance (MR) ratio up to 20% under 0.5 T and a bias current of 20 µA. The MR ratio is found to be tunable, which increases with increasing external bias and the aspect ratios of the nanotips. Electric-field-induced metallization, in conjunction with nanotip geometry, is proposed to be the origin for the giant MR ratio.

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http://dx.doi.org/10.1088/0957-4484/22/12/125701DOI Listing

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