AI Article Synopsis
- An etched beam splitter (EBS) using frustrated total internal reflection (FTIR) is created based on InP/InGaAsP materials, noted for its small size (8x11 μm) and versatile coupling ratios.
- A pre-etching process enables precise control of coupling gaps, resulting in couplers with low insertion loss (1-2.6 dB) and minimal transmission cross-coupling (≤ 10%).
- The EBS shows stable performance across the C-band, making it ideal for wavelength division multiplexing and is successfully integrated with semiconductor optical amplifiers and phase modulators to create tunable channelizing filters and an EBS-coupled ring laser.
Article Abstract
An etched beam splitter (EBS) photonic coupler based on frustrated total internal reflection (FTIR) is designed, fabricated and characterized in the InP/InGaAsP material system. The EBS offers an ultra compact footprint (8x11 μm) and a complete range of bar/cross coupling ratio designs. A novel pre-etching process is developed to achieve sufficient depth of the etched coupling gaps. Fabricated EBS couplers demonstrate insertion loss between 1 and 2.6 dB with transmission (cross-coupling) ≤ 10%. The results show excellent agreement with 3D finite-difference time-domain (FDTD) modeling. The coupling of EBS has weak wavelength dependence in the C-band, making it suitable for wavelength division multiplexing (WDM) or other wide bandwidth applications. Finally, the EBS is integrated with active semiconductor optical amplifier (SOA) and phase-modulator components; using a flattened ring resonator structure, a channelizing filter tunable in both amplitude and center frequency is demonstrated, as well as an EBS coupled ring laser.
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| http://dx.doi.org/10.1364/OE.19.000717 | DOI Listing |
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