A high-intensity positron beam is used for specific in situ monitoring of thermally activated fast defect annealing in Cu and Ni on a time scale of minutes. The atomistic technique of positron-electron annihilation is combined with macroscopic high-precision length-change measurements under the same thermal conditions. The combination of these two methods as demonstrated in this case study allows for a detailed analysis of multistage defect annealing in solids distinguishing vacancies, dislocations, and grain growth.
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http://dx.doi.org/10.1103/PhysRevLett.105.146101 | DOI Listing |
J Phys Chem Lett
December 2024
State Key Laboratory of Chemical Engineering, College of Chemical and Biological Engineering, Zhejiang University, 866 Yuhangtang Road, Hangzhou 310058, China.
Comonomer defects can induce semicrystalline polymers to form unique crystalline structures (., defect crystals), which can greatly influence the materials' physical properties. However, the formation mechanism and structural evolution of defect polymer crystals are not yet well understood.
View Article and Find Full Text PDFNanoscale
December 2024
School of Physics and Electronics, Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, and College of Materials Science and Engineering, Hunan University, Changsha 410082, China.
Quasi-2D perovskites have emerged as a promising candidate material for displays owing to their high photoluminescence quantum yields and low-cost solution synthesis. However, achieving pure red quasi-2D perovskite films with luminescence centered at 630 nm and a narrow emission band presents a critical challenge for high-definition displays. Herein, by incorporating 18-crown-6 as additives that simultaneously passivate defects and regulate phase distribution, full iodine-based quasi-2D perovskite films with a single red emission peak and spectral stability are designed.
View Article and Find Full Text PDFNanotechnology
December 2024
College of Nanoscale Science and Engineering, State University of New York at Albany, NFS 234, 215 Fuller Road, Albany, NY 12203, USA, Albany, 12203, UNITED STATES.
GaN is an important semiconductor for energy-efficient light-emitting devices. Hydrogen plays a crucial role in gallium nitride (GaN) growth and processing. It can form electrically neutral complexes with acceptors during growth, which significantly increases the acceptor incorporation.
View Article and Find Full Text PDFNature
December 2024
Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, USA.
Recently, the bilayer nickelate LaNiO has been discovered as a new superconductor with transition temperature T near 80 K under high pressure. Despite extensive theoretical and experimental work to understand the nature of its superconductivity, the requirement of extreme pressure restricts the use of many experimental probes and limits its application potential. Here, we present signatures of superconductivity in LaNiO thin films at ambient pressure, facilitated by the application of epitaxial compressive strain.
View Article and Find Full Text PDFACS Appl Mater Interfaces
December 2024
Department of Chemistry, Material Science Lab, Annamalai University, Annamalai Nagar, Tamilnadu 608 002, India.
Herein, we demonstrated that a polycrystalline cobalt oxide/borate (CoO-Bo) hybrid catalyst prepared by coprecipitation followed a simple annealing process with a viable boron source of less hazardous ammonium borate, an efficient electrocatalyst for the oxygen evolution reaction (OER). The borate species in the crystalline cobalt oxide lattice provides a tunable polycrystalline morphology with a defect-rich lattice and numerous grain boundaries in the CoO-Bo hybrid electrocatalyst, which significantly boosts the OER activity compared to the crystalline counterparts of CoO and precious IrO in a harsh alkaline electrolyte (1 M KOH). The borate modulated CoO-Bo achieves a 10 mA/cm geometrical current density for the OER with a very low overpotential (η) of 271 mV and small Tafel slope of 34 mV dec, in an inert glassy carbon (GC) support, while only requiring η of 267 and 32 mV dec in a 3D nickel foam (NF) support at the same current density.
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