Multifrequency numerical simulations of the light-coupling efficiency of a prismatic bioinspired compound lens (BCL) of silicon atop a thick silicon substrate were carried out within the framework of geometrical optics. Comparison was made with untextured and groove-textured silicon substrates as well as with untextured silicon substrates with a double-layer anti-reflection (DLAR) coating. Taking into account the broadband nature and the sea-level spectral irradiance of the insolation flux, and averaging over all admissible directions and both linear polarization states of the incident light, we found that the light-coupling efficiency can be almost doubled with respect to the untextured silicon substrate and enhanced by about a third with respect to a DLAR-coated untextured silicon substrate, by adopting a DLAR-coated silicon BCL.
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http://dx.doi.org/10.1088/1748-3182/6/1/014002 | DOI Listing |
Nano Lett
January 2025
CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China.
Exciton emitters in two-dimensional monolayer transition-metal dichalcogenides (TMDs) provide a boulevard for the emerging optoelectronic field, ranging from miniaturized light-emitting diodes to quantum emitters and optical communications. However, the low quantum efficiency from limited light-matter interactions and harmful substrate effects seriously hinders their applications. In this work, we achieve a ∼438-fold exciton photoluminescence enhancement by constructing a Fabry-Pérot cavity consisting of monolayer WS and a micron-scale hole on the SiO/Si substrate.
View Article and Find Full Text PDFThis paper explores the process of forming arrays of vertically oriented carbon nanotubes (CNTs) localized on metal electrodes using thin porous anodic alumina (PAA) on a solid substrate. On a silicon substrate, a titanium film served as the electrode layer, and an aluminium film served as the base layer in the initial film structure. A PAA template was formed from the Al film using two-step electrochemical anodizing.
View Article and Find Full Text PDFNanotechnology
January 2025
Radiophysics, Tomsk State University, Lenin, 36, Tomsk, Tomsk region, 634050, RUSSIAN FEDERATION.
Structural and photoelectric properties of p-i-n photodiodes based on GeSiSn/Si multiple quantum dots both on Si and silicon-on-insulator (SOI) substrates were investigated. Elastic strained state of grown films was demonstrated by x-ray diffractometry. Annealing of p-i-n structures before the mesa fabrication can improve the ideality factor of current-voltage characteristics.
View Article and Find Full Text PDFACS Nano
January 2025
School of Chemistry and Chemical Engineering, Nanjing University of Science and Technology, Nanjing 210094, P. R. China.
Neural-electronic interfaces through delivering electroceuticals to lesions and modulating pathological endogenous electrical environments offer exciting opportunities to treat drug-refractory neurological disorders. Such an interface should ideally be compatible with the neural tissue and aggressive biofluid environment. Unfortunately, no interface specifically designed for the biofluid environments is available so far; instead, simply stacking an encapsulation layer on silicon-based substrates makes them susceptible to biofluid leakage, device malfunction, and foreign-body reactions.
View Article and Find Full Text PDFThe introduction of intermediate bands by hyperdoping is an efficient way to realize infrared light absorption of silicon. In this Letter, inert element (helium and argon for specific)-doped black silicon is obtained by helium ion-implantation followed by femtosecond pulse laser irradiation in an argon atmosphere based on near-intrinsic silicon substrates. Within the 200 nm of the silicon surface, the concentrations of helium and argon are both above the order of 10 cm.
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