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Metal silicides have received significant attention due to their high process compatibility, low resistivity, and structural stability. In nanowire (NW) form, they have been widely prepared using metal diffusion into preformed Si NWs, enabling compositionally controlled high-quality metal silicide nanostructures. However, unlocking the full potential of metal silicide NWs for next-generation nanodevices requires an increased level of mechanistic understanding of this diffusion-driven transformation.

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Metal silicide thin films and nanostructures typically employed in electronics have recently gained significant attention in battery technology, where they are used as active or inactive materials. However, unlike thin films, the science behind the evolution of silicide nanostructures, especially 1D nanowires (NWs), is a key missing aspect. CuSi nanostructures synthesized by solvent vapor growth technique are studied as a model system to gain insights into metal silicide formation.

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