We describe the gated bilayer graphene system when it is subjected to intense terahertz frequency electromagnetic radiation. We examine the electron band structure and density of states via exact diagonalization methods within Floquet theory. We find that dynamical states are induced which lead to modification of the band structure. We first examine the situation where there is no external magnetic field. In the unbiased case, dynamical gaps appear in the spectrum which manifest as dips in the density of states. For finite inter-layer bias (where a static gap is present in the band structure of unirradiated bilayer graphene), dynamical states may be induced in the static gap. These states can show a high degree of valley polarization. When the system is placed in a strong magnetic field, the radiation induces coupling between the Landau levels which allows dynamical levels to exist. For strong fields, this means the Landau levels are smeared to form a near-continuum of states.
Download full-text PDF |
Source |
|---|---|
| http://dx.doi.org/10.1088/0957-4484/22/1/015203 | DOI Listing |
Publication Analysis
Top Keywords
Similar Publications
Ferroelectricity with concomitant Coulomb screening in van der Waals heterostructures.
Nat Nanotechnol
January 2025
State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing, China.
Interfacial ferroelectricity emerges in non-centrosymmetric heterostructures consisting of non-polar van der Waals (vdW) layers. Ferroelectricity with concomitant Coulomb screening can switch topological currents or superconductivity and simulate synaptic response. So far, it has only been realized in bilayer graphene moiré superlattices, posing stringent requirements to constituent materials and twist angles.
View Article and Find Full Text PDFBilayer nanographene reveals halide permeation through a benzene hole.
Nature
January 2025
Institut für Organische Chemie, Universität Würzburg, Würzburg, Germany.
Graphene is a single-layered sp-hybridized carbon allotrope, which is impermeable to all atomic entities other than hydrogen. The introduction of defects allows selective gas permeation; efforts have been made to control the size of these defects for higher selectivity. Permeation of entities other than gases, such as ions, is of fundamental scientific interest because of its potential application in desalination, detection and purification.
View Article and Find Full Text PDFMetallic Electro-optic Effect in Gapped Bilayer Graphene.
Nano Lett
January 2025
Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371.
Electro-optic (EO) modulation is a critical device action in photonics. Recently, the non-Drude dynamics induced by the Berry curvature dipole (BCD) in metals have attracted attention as a potential candidate for terahertz EO modulation. However, such BCD-induced EO effects can be challenging to realize, often requiring flat bands and complex materials such as a strained magic-angle twisted bilayer graphene on hexagonal boron nitride.
View Article and Find Full Text PDFCarbon nanotubes at bilayer in-plane graphene/hBN with interlayer twist angles abnormally enhance its interlayer stress transfer.
iScience
January 2025
School of Civil Engineering and Architecture, Zhejiang University of Science & Technology, Hangzhou, P.R. China.
A possibility of unprecedented architecture may be opened up by combining both vertical and in-plane heterostructures. It is fascinating to discover that the interlayer stress transfer, interlayer binding energy, and interlayer shear stress of bi-layer Gr/hBN with CNTs heterostructures greatly increase (more than 2 times) with increase the numbers of CNTs and both saturate at the numbers of CNTs = 3, but it causes only 10.92% decrease in failure strain.
View Article and Find Full Text PDFIn-Plane Transition-Metal Dichalcogenide Junction with Nearly Zero Interfacial Band Offset.
ACS Nano
January 2025
Center for Interdisciplinary Science of Optical Quantum and NEMS Integration, School of Physics, Advanced Research Institute of Multidisciplinary Science, and School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China.
Two-dimensional in-plane transition-metal dichalcogenide (TMD) junctions have a range of potential applications in next-generation electronic devices. However, limited by the difficulties in ion implantation on 2D systems, the fabrication of the in-plane TMD junctions still relies on the lateral epitaxy of different materials, which always induces lattice mismatch and interfacial scattering. Here, we report the in-plane TMD junction formed with monolayer (ML) PtTe at the boundary of ML and bilayer graphene on SiC.
View Article and Find Full Text PDFWant AI Summaries of new PubMed Abstracts delivered to your In-box?
Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!