Multiferroic BiFeO3 thin films for multifunctional devices.

We report the metalorganic chemical vapor deposition of crystalline BiFeO3 films on platinized silicon substrates using n-butylferrocene, triphenylbismuth and oxygen. Based on thermogravimetric analysis data, the suitability of these two precursors for depositing BiFeO3 is discussed. The deposited films were characterized for structure and morphology using X-ray diffraction and scanning electron microscopy. Composition analysis using X-ray photoelectron spectroscopy revealed that the films were stoichiometric BiFeO3. Electrostatic force microscopy indicated that the film had polarizable domains that showed no deterioration in polarization over time long after electric poling. The film showed a saturation magnetization of 10 +/- 1 emu/cm3 at room temperature.