One-pot hydrothermal process has been developed to synthesize uniform Te@phenol formaldehyde resin core-shell nanowires with unique fluorescent properties. A synergistic soft-hard template mechanism has been proposed to explain the formation of the core-shell nanowires. The Te@phenol formaldehyde resin core-shell nanowires display unique fluorescent properties, which give strong luminescent emission in the blue-violet and green regions with excitation wavelengths of 270 nm and 402 nm, respectively.
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http://dx.doi.org/10.1088/0957-4484/21/49/495602 | DOI Listing |
ACS Appl Mater Interfaces
January 2025
Department of Applied Physics and Integrated Education Institute for Frontier Science and Technology (BK21 Four), Kyung Hee University, Yongin 17104, Korea.
One-dimensional (1D) vertical nitrides are highly attractive for light-emitting diode (LED) applications because they are useful for overcoming the drawbacks of conventional GaN planar structures. However, the internal quantum efficiency (IQE) of GaN multi-quantum-well (MQW) nanowire (NW) LEDs, typical 1D GaN structures, is still too low to replace standard planar LEDs. Here, we report a phenomenon of light amplification from core-shell InGaN/GaN NW LEDs by incorporating graphene quantum dots (GQDs).
View Article and Find Full Text PDFNanotechnology
January 2025
Xi'an Jiaotong University, xian ning west road 28#, xi'an, Xi'an, None Selected, 710049, CHINA.
Accurate and rapid diagnosis of traumatic brain injury (TBI) is essential for high-quality medical services. Nonetheless, the current diagnostic platform still has challenges in rapidly and accurately analysing clinical samples. Here, we prepared a highly stable, repeatable and sensitive gold-plated silver core-shell nanowire (Ag@AuNWs) for surface-enhanced Raman spectroscopy (SERS) metabolic fingerprint diagnosis of TBI.
View Article and Find Full Text PDFNanotechnology
January 2025
Laboratory of micro- and nanoelectronics, Saint Petersburg Electrotechnical University 'LETI', Prof. Popova st. 5, 197022 St.Petersburg, Russia.
The processes of electrochemical deposition of Ni on vertically aligned GaAs nanowires (NWs) grown by molecular-beam epitaxy (MBE) using Au as a growth catalyst on n-type Si(111) substrates were studied. Based on the results of electrochemical deposition, it was concluded that during the MBE synthesis of NWs the self-induced formation of conductive channels can occur inside NWs, thereby forming quasi core-shell NWs. Depending on the length of the channel compare to the NW heights and the parameters of electrochemical deposition, the different hybrid metal-semiconductor nanostructures, such as Ni nanoparticles on GaAs NW side walls, Ni clusters on top ends of GaAs NWs, core-shell GaAs/Ni NWs, were obtained.
View Article and Find Full Text PDFChem Commun (Camb)
December 2024
Department of Life Science and Technology, Institute of Science Tokyo, Nagatsuta 4259, Midori-ku, Yokohama 226-8501, Japan.
Gallium nitride-based nanowires (NWs) overcome heteroepitaxy limits, enabling GaN-on-silicon devices, and offer high sensitivity for detection, sensing, and photocatalysis. Additional nanowire coating enhances their performance, protects against photoadsorption, and enables control over structural and optical properties. In this work, we investigate core-shell GaN-(Al/Hf)O nanowires, which meet the aforementioned expectations.
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