Coaxing correlated materials to the proximity of the insulator-metal transition region, where electronic wavefunctions transform from localized to itinerant, is currently the subject of intensive research because of the hopes it raises for technological applications and also for its fundamental scientific significance. In general, this tuning is achieved by either chemical doping to introduce charge carriers, or external stimuli to lower the ratio of Coulomb repulsion to bandwidth. In this study, we combine experiment and theory to show that the transition from well-localized insulating states to metallicity in a Ruddlesden-Popper series, La(0.5)Sr(n+1-0.5)Ti(n)O(3n+1), is driven by intercalating an intrinsically insulating SrTiO(3) unit, in structural terms, by dimensionality n. This unconventional strategy, which can be understood upon a complex interplay between electron-phonon coupling and electron correlations, opens up a new avenue to obtain metallicity or even superconductivity in oxide superlattices that are normally expected to be insulators.
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http://dx.doi.org/10.1038/ncomms1111 | DOI Listing |
Nanophotonics
August 2024
Key Laboratory of Optoelectronic Technology & Systems, Ministry of Education, and College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, China.
Interference between the electric and magnetic dipole-induced in Mie nanostructures has been widely demonstrated to tailor the scattering field, which was commonly used in optical nano-antennas, filters, and routers. The dynamic control of scattering fields based on dielectric nanostructures is interesting for fundamental research and important for practical applications. Here, it is shown theoretically that the amplitude of the electric and magnetic dipoles induced in a vanadium dioxide nanosphere can be manipulated by using laser-induced metal-insulator transitions, and it is experimentally demonstrated that the directional scattering can be controlled by simply varying the irradiances of the excitation laser.
View Article and Find Full Text PDFSci Rep
October 2024
Department SBAI, Sapienza University of Roma, Via A. Scarpa 14, 00161, Rome, Italy.
VO is a promising phase change material offering a large contrast of electric, thermal, and optical properties when transitioning from semiconductor to metallic phase. Here we show that a hybrid metamaterial obtained by proper combination of a VO layer and a nanodisk gold array provides a tunable plasmonic gap resonance in the infrared range. Specifically, we have designed and fabricated a metal-insulator-metal gap resonance by inserting sub-wavelength VO film between a flat gold layer and a gold nanodisk resonator array.
View Article and Find Full Text PDFACS Appl Mater Interfaces
October 2024
Department of Materials Science and Engineering, Seoul National University of Science and Technology, Seoul 01811, Republic of Korea.
The continuous miniaturization of dynamic random-access memory (DRAM) capacitors has amplified the demand for electrode materials featuring specific characteristics, such as low resistivity, high work function, chemical stability, excellent interface quality with high-k dielectrics, and superior mechanical properties. In this study, molybdenum nitride (MoN) films were deposited using a plasma-enhanced atomic layer deposition (PEALD) employing bis(isopropylcyclopentadienyl)molybdenum(IV) dihydride and NH plasma for DRAM capacitor electrode applications. Depending on the deposition temperatures of the PEALD MoN films ranging from 200 to 400 °C, the Mo/N ratio and crystal structure varied, transitioning from the cubic NaCl-B1-type MoN phase with Mo/N ratio of 1.
View Article and Find Full Text PDFNano Lett
October 2024
Institute of Automation and Control Processes, Far Eastern Branch, Russian Academy of Science, 5 Radio Str., Vladivostok 690041, Russia.
J Chem Phys
September 2024
James Franck Institute, The University of Chicago, 929 E. 57th Street, Chicago, Illinois 60637, USA.
Room temperature 6 μm intraband cascade electroluminescence (EL) is demonstrated with lightly n-doped HgTe colloidal quantum dots of ∼8 nm diameter deposited on interdigitated electrodes in a metal-insulator-metal device. With quantum dot films of ∼150 nm thickness made by solid-state-ligand-exchange, the devices emit at 1600 cm-1 (6.25 μm), with a spectral width of 200 cm-1, determined by the overlap of the 1Se-1Pe intraband transition of the quantum dots and the substrate photonic resonance.
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