Nanoscale transistors employing an individual semiconducting carbon nanotube as the channel hold great potential for logic circuits with large integration densities that can be manufactured on glass or plastic substrates. Carbon nanotubes are usually produced as a mixture of semiconducting and metallic nanotubes. Since only semiconducting nanotubes yield transistors, the metallic nanotubes are typically not utilized. However, integrated circuits often require not only transistors, but also resistive load devices. Here we show that many of the metallic carbon nanotubes that are deposited on the substrate along with the semiconducting nanotubes can be conveniently utilized as load resistors with favorable characteristics for the design of integrated circuits. We also demonstrate the fabrication of arrays of transistors and resistors, each based on an individual semiconducting or metallic carbon nanotube, and their integration on glass substrates into logic circuits with switching frequencies of up to 500 kHz using a custom-designed metal interconnect layer.
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http://dx.doi.org/10.1088/0957-4484/21/47/475207 | DOI Listing |
Anal Chem
January 2025
Institute of Eco-Environmental and Soil Sciences, Guangdong Academy of Sciences, Guangzhou 510650, China.
A sensitive fluorescence biosensor was developed for microcystin-LR (MC-LR) detection using H1, H2, and H3 DNA probes as sensing elements. The aptamer in H1 can recognize the target. H2 was labeled with FAM and BHQ.
View Article and Find Full Text PDFACS Appl Mater Interfaces
January 2025
Institute of Advanced Materials and Systems, Sookmyung Women's University, Seoul 04310, Republic of Korea.
Multivalued logic (MVL) systems, in which data are processed with more than two logic values, are considered a viable solution for achieving superior processing efficiency with higher data density and less complicated system complexity without further scaling challenges. Such MVL systems have been conceptually realized by using negative transconductance (NTC) devices whose channels consist of van der Waals (vdW) heterojunctions of low-dimensional semiconductors; however, their circuit operations have not been quite ideal for driving multiple stages in real circuit applications due to reasons such as a reduced output swing and poorly defined logic states. Herein, we demonstrate ternary inverter circuits with near rail-to-rail swing and three distinct logic states by employing vdW p-n heterojunctions of single-walled carbon nanotubes (SWCNT) and MoS where the SWCNT layer completely covers the MoS layer.
View Article and Find Full Text PDFNano Lett
January 2025
State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China.
Optical computing, renowned for its light-speed processing and low power consumption, typically relies on the coherent control of two light sources. However, there are challenges in stabilizing and maintaining high optical spatiotemporal coherence, especially for large-scale computing systems. The coherence requires rigorous feedback circuits and numerous phase shifters, introducing system instability and complexity.
View Article and Find Full Text PDFNanotechnology
January 2025
Xidian University, Xi'an 710071, China, Xi'an, Xian, Shaanxi, 710126, CHINA.
Anti-ambipolar transistors (AAT) are considered as a breakthrough technology in the field of electronics and optoelectronics, which is not only widely used in diverse logic circuits, but also crucial for the realization of high-performance photodetectors. The anti-ambipolar characteristics arising from the gate-tunable energy band structure can produce high-performance photodetection at different gate voltages. As a result, this places higher demands on the parametric driving range (ΔVg) and peak-to-valley ratio (PVR) of the AAT.
View Article and Find Full Text PDFNano Lett
January 2025
Department of Physics and Astronomy, University of California Riverside, Riverside, California 92521, United States.
Transition metal dichalcogenides (TMDs) with rhombohedral (3R) stacking order are excellent platforms to realize multiferroelectricity. In this work, we demonstrate the electrical switching of ferroelectric orders in bilayer, trilayer, and tetralayer 3R-MoS dual-gate devices by examining their reflection and photoluminescence (PL) responses under sweeping out-of-plane electric fields. We observe sharp shifts in excitonic spectra at different critical fields with pronounced hysteresis.
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