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We demonstrate the use of n/p polymer/polymer heterojunctions deposited by sequential solution processing to fabricate ambipolar field-effect transistors and complementary logic circuits. Electron and hole mobilities in the transistors were ∼0.001-0.01 cm(2)/(V s) in air without encapsulation. Complementary circuits integrating multiple ambipolar transistors into NOT, NAND, and NOR gates were fabricated and shown to exhibit sharp signal switching with a high voltage gain.
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