Dip-pen nanolithography of electrical contacts to single graphene flakes.

ACS Nano

Department of Chemical Engineering, Stanford University, Stanford, California 94305, United States.

Published: November 2010

This study evaluates an alternative to electron-beam lithography for fabricating nanoscale graphene devices. Dip-pen nanolithography is used for defining monolayer graphene flakes and for patterning of gold electrodes through writing of an alkylthiol on thin films of gold evaporated onto graphene flakes. A wet gold etching step was used to form the individual devices. The sheet resistances of these monolayer graphene devices are comparable to reported literature values. This alternative technique for making electrical contact to 2D nanostructures provides a platform for fundamental studies of nanomaterial properties. The merits of using dip-pen nanolithography include lack of electron-beam irradiation damage and targeted patterning of individual devices with imaging and writing conducted in the same instrument under ambient conditions.

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Source
http://dx.doi.org/10.1021/nn101324xDOI Listing

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