In this paper active screen plasma nitriding (ASPN) is used to chemically modify the surface of UHMWPE. This is an unexplored and new area of research. ASPN allows the homogeneous treatment of any shape or surface at low temperature; therefore, it was thought that ASPN would be an effective technique to modify organic polymer surfaces. ASPN experiments were carried out at 120 °C using a dc plasma nitriding unit with a 25% N(2) and 75% H(2) atmosphere at 2.5 mbar of pressure. UHMWPE samples treated for different time periods were characterized by nanoindentation, FTIR, XPS, interferometry and SEM. A 3T3 fibroblast cell line was used for in vitro cell culture experiments. Nanoindentation of UHMWPE showed that hardness and elastic modulus increased with ASPN treatment compared to the untreated material. FTIR spectra did not show significant differences between the untreated and treated samples; however, some changes were observed at 30 min of treatment in the range of 1500-1700 cm(-1) associated mainly with the presence of N-H groups. XPS studies showed that nitrogen was present on the surface and its amount increased with treatment time. Interferometry showed that no significant changes were observed on the surfaces after the treatment. Finally, cell culture experiments and SEM showed that fibroblasts attached and proliferated to a greater extent on the plasma-treated surfaces leading to the conclusion that ASPN surface treatment can potentially significantly improve the biocompatibility behaviour of polymeric materials.
Download full-text PDF |
Source |
---|---|
http://dx.doi.org/10.1088/1748-6041/5/5/054102 | DOI Listing |
RSC Adv
January 2025
College of Environment and Chemical Engineering, Dalian University Dalian 116622 Liaoning P. R. China
Photocatalytic technology for removing organic dye pollutants has gained considerable attention because of its ability to harness abundant solar energy without requiring additional chemical reagents. In this context, YF spheres doped with Yb, Er, Tm (YF) are synthesized using a hydrothermal method and are subsequently coated with a layer of graphitic carbon nitride (g-CN) with Au nanoparticles (NPs) adsorbed onto the surface to create a core-shell structure, designated as YF: Yb, Er, Tm@CN-Au (abbreviated as YF@CN-Au). The core-shell composites demonstrate remarkable stability, broadband absorption, and exceptional photocatalytic activity across the ultraviolet (UV) to near-infrared (NIR) spectral range.
View Article and Find Full Text PDFEnviron Res
January 2025
Key Laboratory of the Three Gorges Reservoir Region's Eco-Environment, Ministry of Education, Chongqing University, Chongqing, 400045, China. Electronic address:
Residual antibiotics in aquatic environments pose health and ecological risks due to their persistence and resistance to biodegradation. Thus, it is crucial to develop efficient technologies for the degradation of such antibiotics. This study presents a novel approach using a nano zero-valent iron/graphitic carbon nitride (nZVI/g-CN)-enhanced dielectric barrier discharge (DBD) plasma process for the degradation of ciprofloxacin (CIP).
View Article and Find Full Text PDFMaterials (Basel)
January 2025
Faculty of Engineering, Kitami Institute of Technology, 165 Koen-cho, Kitami 090-8507, Hokkaido, Japan.
The addition of hydrogen to nitrogen facilitates the formation of nitride phases in the plasma nitriding processes of stainless steels, though it also induces the deterioration of their mechanical properties. This study presents a hydrogen-free plasma nitriding process for fabricating a nitrogen-expanded austenite phase (γ) on an AISI 316 stainless steel surface. The steel substrate was nitrided in N-Ar plasma with various gas compositions discharged by radio frequency (RF) and direct current (DC) modes.
View Article and Find Full Text PDFMicromachines (Basel)
November 2024
State Key Discipline Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China.
In this work, we show a high-performance GaN-on-Si quasi-vertical PiN diode based on the combination of beveled sidewall and fluorine plasma treatment (BSFP) by an inductively coupled plasma (ICP) system. The leakage current and breakdown voltage of the diode are systematically studied. Due to the beveled sidewall treated by the fluorine plasma, the diodes achieve an excellent breakdown voltage (V) of 790 V and a low reverse leakage current.
View Article and Find Full Text PDFMicromachines (Basel)
November 2024
School of Integrative Engineering, Chung-Ang University, 84, Heukseok-ro, Dongjak-gu, Seoul 06974, Republic of Korea.
We examined how controlling variables in a pre-metallization Ar sputter-etching process for in situ contact-hole cleaning affects the contact-hole profile, etching rate, and substrate damage. By adjusting process parameters, we confirmed that increasing plasma power lowered the DC bias but enhanced the etching rate of SiO, while increasing RF power raised both, with RF power having a more pronounced effect. Higher Ar flow rate reduced etching uniformity and slightly lowered the DC bias.
View Article and Find Full Text PDFEnter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!