The authors describe how acoustic phonons can directly tunnel through vacuum and, therefore, transmit energy and conduct heat between bodies that are separated by a vacuum gap. This effect is enabled by introducing a coupling mechanism, such as piezoelectricity, that strongly couples electric field and lattice deformation. The electric field leaks into the vacuum as an evanescent field, which leads to finite solid-vacuum-solid transmission probability. Because of strong resonances in the system, some phonons can go through the vacuum gap with (or close to) unity transmission, which leads to significant thermal conductance and heat flux.
Download full-text PDF |
Source |
|---|---|
| http://dx.doi.org/10.1103/PhysRevLett.105.125501 | DOI Listing |
Publication Analysis
Top Keywords
Similar Publications
Faithful quantum state transfer between telecom photons and microwave frequency mechanical oscillations necessitate a fast conversion rate and low thermal noise. Two-dimensional (2D) optomechanical crystals (OMCs) are favorable candidates that satisfy those requirements. 2D OMCs enable sufficiently high mechanical frequency (1∼10 GHz) to make the resolved-sideband regime achievable, a prerequisite for many quantum protocols.
View Article and Find Full Text PDFMonolayer MoS with S vacancy defects doped with Group V non-metallic elements (N, P, As): a first-principles study.
J Mol Model
January 2025
Nanjing Hydraulic Research Institute, Shanghai, China.
Context: This study systematically investigated the effects of single S-atom vacancy defects and composite defects (vacancy combined with doping) on the properties of MoS using density functional theory. The results revealed that N-doped S-vacancy MoS has the smallest composite defect formation energy, indicating its highest stability. Doping maintained the direct band gap characteristic, with shifts in the valence band top.
View Article and Find Full Text PDFOn-chip non-contact mechanical cell stimulation - quantification of SKOV-3 alignment to suspended microstructures.
Heliyon
January 2025
Electrical and Computer Engineering, University of Canterbury, Christchurch, New Zealand.
Although the accumulation of random genetic mutations has been traditionally viewed as the main cause of cancer progression, altered mechanobiological profiles of the cells and microenvironment also play a major role as a mutation-independent element. To probe the latter, we have previously reported a microfluidic cell-culture platform with an integrated flexible actuator and its application for sequential cyclic compression of cancer cells. The platform is composed of a control microchannel in a top layer for introducing external pressure, and a polydimethylsiloxane (PDMS) membrane from which a monolithically-integrated actuator protrudes downwards into a cell-culture microchannel.
View Article and Find Full Text PDFDirect observation of chiral edge current at zero magnetic field in a magnetic topological insulator.
Nat Commun
January 2025
State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, China.
The chiral edge current is the boundary manifestation of the Chern number of a quantum anomalous Hall (QAH) insulator. The van der Waals antiferromagnet MnBiTe is theorized to be a QAH in odd-layers but has shown Hall resistivity below the quantization value at zero magnetic field. Here, we perform scanning superconducting quantum interference device (sSQUID) microscopy on these seemingly failed QAH insulators to image their current distribution.
View Article and Find Full Text PDFTheoretical and experimental investigations of the CMOS compatible Pirani gauges with a temperature compensation model.
Microsyst Nanoeng
January 2025
The School of Integrated Circuits and Electronics, Beijing Institute of Technology, 100081, Beijing, China.
In this article, a CMOS-compatible Pirani vacuum gauge was proposed featuring enhanced sensitivity, lower detection limit, and high-temperature stability, achieved through the implementation of a surface micromachining method coupled with a temperature compensation strategy. To improve performance, a T-type device with a 1 µm gap was fabricated resulting in an average sensitivity of 1.10 V/lgPa, which was 2.
View Article and Find Full Text PDFWant AI Summaries of new PubMed Abstracts delivered to your In-box?
Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!