Download full-text PDF |
Source |
|---|---|
| http://dx.doi.org/10.1002/adma.201002608 | DOI Listing |
Publication Analysis
Top Keywords
Similar Publications
Zr-Doping Strategy of High-Quality CuO/β-GaO Heterojunction for Ultrahigh-Performance Solar-Blind Ultraviolet Photodetection.
ACS Appl Mater Interfaces
November 2024
Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials, Ministry of Education and School of Materials Science and Engineering, Shandong University, Jinan 250061, China.
β-GaO, as an ultrawide band gap semiconductor, has emerged as the most promising candidate in solar-blind photodetectors. The practical application of β-GaO, however, suffers from intrinsic defects and suboptimal crystal quality within the devices. In this work, high-quality β-GaO was successfully synthesized by employing the Zr-doping strategy, which has facilitated the development of ultrahigh-performance solar-blind photodetectors based on CuO/β-GaO heterostructures.
View Article and Find Full Text PDFUltrasensitive Flexible κ-Phase GaO Solar-Blind Photodetector.
ACS Appl Mater Interfaces
August 2022
Advanced Semiconductor Laboratory, Electrical and Computer Engineering Program, CEMSE Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Kingdom of Saudi Arabia.
Flexible GaO photodetectors have attracted considerable interest owing to their potential use in the development of implantable, foldable, and wearable optoelectronics. In particular, β-phase GaO has been most widely investigated due to the highest thermodynamic stability. However, high-quality β-phase GaO relies on the ultrahigh crystallization temperature (usually ≥750 °C), beyond the thermal tolerance of most flexible substrates.
View Article and Find Full Text PDFUltra-High Performance Amorphous Ga O Photodetector Arrays for Solar-Blind Imaging.
Adv Sci (Weinh)
October 2021
School of Microelectronics, University of Science and Technology of China, Hefei, Anhui, 230026, China.
The growing demand for scalable solar-blind image sensors with remarkable photosensitive properties has stimulated the research on more advanced solar-blind photodetector (SBPD) arrays. In this work, the authors demonstrate ultrahigh-performance metal-semiconductor-metal (MSM) SBPDs based on amorphous (a-) Ga O via a post-annealing process. The post-annealed MSM a-Ga O SBPDs exhibit superhigh sensitivity of 733 A/W and high response speed of 18 ms, giving a high gain-bandwidth product over 10 at 5 V.
View Article and Find Full Text PDFUltrahigh-performance solar-blind photodetectors based on individual single-crystalline In₂Ge₂O₇ nanobelts.
Adv Mater
December 2010
International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Ibaraki, Japan.
Want AI Summaries of new PubMed Abstracts delivered to your In-box?
Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!