We report an individually addressable Ti∕GaAs metal-semiconductor hybrid optical nanosensor with positive photoresistance and a sensitivity that increases as the device dimensions shrink. The underlying physics relates to the crossover from ballistic to diffusive transport of the photoinduced carriers and the geometric enhancement of the effect associated with a Schottky-barrier-coupled parallel metal shunt layer. For a 250 nm device under 633 nm illumination we observe a specific detectivity of D(*)=5.06×10(11) cm √Hz∕W with a dynamic response of 40 dB.
Download full-text PDF |
Source |
|---|---|
| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC2941515 | PMC |
| http://dx.doi.org/10.1063/1.3480611 | DOI Listing |
Publication Analysis
Top Keywords
Similar Publications
Plasmon-enhanced visible photodetectors based on hexagonal boron nitride (hBN) with gold (Au), silver (Ag), and non-alloyed bimetallic (Au/Ag) nanoparticles.
Sci Rep
January 2025
Photonics Research Centre, Universiti Malaya, Kuala Lumpur, 50603, Malaysia.
Two-dimensional (2D) hexagonal boron nitride (hBN) has garnered significant attention due to its exceptional thermal and chemical stability, excellent dielectric properties, and unique optical characteristics, making it widely used in deep ultraviolet (DUV) applications. However, the integration of hBN with plasmonic materials in the visible region (532 nm) has not been fully explored, particularly in terms of morphology regulation and size control of mono- and bimetallic nanoparticles (BMNPs) namely gold (Au), silver (Ag) and Au-Ag. A Schottky junction-based metal-semiconductor contact configuration is employed to achieve hot-carrier reflections on the metal side, enhancing the quantum efficiency of the photodetector.
View Article and Find Full Text PDFSymmetry Engineering in a 2D Transition Metal Enables Reconfigurable P- and N-Type FETs.
Nano Lett
January 2025
Department of Applied Physical Sciences, University of North Carolina, Chapel Hill, North Carolina 27514, United States.
Two-dimensional (2D) transition metals enable the elimination of metal-induced gap states and Fermi-level pinning in field-effect transistors (FETs), offering an advantage over conventional metal contacts. However, transition metal substrates typically exhibit nonoriented behaviors, leading to the inability to achieve monolingual responses with P- or N-type semiconductors. Here we devise symmetry engineering in an oxidized architectural MXene, termed OXene, which implements the exploiting and coupling of additional out-of-plane electron conduction and built-in polar structures.
View Article and Find Full Text PDFNi(II)-Directed Supramolecular Metallogel: Stimuli Responsiveness and Semiconducting Device Fabrication.
Chem Asian J
December 2024
Department of chemical Sciences, Indian Institute of Science Education and Research Kolkata, Mohanpur, 741246, West Bengal, India.
Metal-organic gels (MOGs) are a type of supramolecular complex that have become highly intriguing due to their synergistic combination of inorganic and organic elements. We report the synthesis and characterization of a Ni-directed supramolecular gel using chiral amino acid L-DOPA (3,4-dihydroxy phenylalanine) containing ligand, which coordinates with Ni(II) to form metal-organic gels with exceptional properties. The functional Ni(II)-gel was synthesized by heating nickel(II) acetate hexahydrate and the L-DOPA containing ligand in DMSO at 70 °C.
View Article and Find Full Text PDFNucleation and growth of zinc-templated mesoporous selenium nanoparticles and potential non-thermal effects during their microwave-assisted synthesis.
Sci Rep
December 2024
Institute of Radioelectronics and Multimedia Technology, Warsaw University of Technology, Warsaw, Poland.
The effects of 5.8-GHz microwave (MW) irradiation on the synthesis of mesoporous selenium nanoparticles (mSeNPs) in aqueous medium by reduction of selenite ions with ascorbic acid, using zinc nanoparticles as a hard template and cetyltrimethylammonium bromide (CTAB) as a micellar template, are examined for the first time with a particular emphasis on MW-particle interactions and the NPs morphology. This MW-assisted synthesis is compared to 2.
View Article and Find Full Text PDFA simple phenomenological account for the metal-induced crystallization of amorphous Ge and Si films.
Sci Rep
December 2024
Institute of Physics, University of São Paulo, São Carlos, 13560-590, SP, Brazil.
When combined with certain metal species, films of amorphous Ge or Si can have their typical crystallization temperatures decreased, by a factor of three or four, down to ~ 200 °C. The phenomenon is called metal-induced crystallization (MIC) and, since its first observation in the late 1960's, shows a great technological potential in producing (poly-)crystalline films of Ge or Si onto low-melting point substrates under reduced energy conditions. From the scientific point of view, the microscopic mechanisms behind the MIC phenomenon (still) represents a scientific challenge, where most of the proposed models are invariably influenced by the samples details giving the impression that they only apply to very specific metal-semiconductor combinations and/or circumstances.
View Article and Find Full Text PDFWant AI Summaries of new PubMed Abstracts delivered to your In-box?
Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!