We report direct measurements of the influence of the available density of acceptor states on the rate of near-barrierless electron transfer between a dye sensitizer and an oxide semiconductor. The electron donor was the excited state of a zinc porphyrin, and the acceptors were a series of size-selected ZnO nanocrystals. The available density of states was tuned by controlling the relative position of the ZnO band edge using quantum confinement. The resulting change in the rate was consistent with a simple model of the state density as a function of energy above the ZnO band edge.
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