Two series of doped titanium dioxide samples (S-TiO(2) and F-TiO(2)) were prepared by the sol-gel method in the presence of different amounts of dopant source (thiourea and NH(4)F, respectively), followed by calcination at 500, 600 or 700 °C, and characterised by BET, UV-vis absorption, XPS, HRTEM, XRD and EPR analyses. Reference undoped materials were prepared by the same synthetic procedure. Their photocatalytic activity under visible light was investigated employing the photocatalytic degradation of formic acid in aqueous suspension as test reaction. S-doped TiO(2) showed a photocatalytic activity quite similar to that of undoped materials. In this regard, the insertion of S, characterised by a relatively large ionic radius, into the TiO(2) crystalline structure appears rather difficult, as confirmed by XPS analysis. On the contrary, moderate F doping was beneficial in increasing the rate of formic acid photocatalytic degradation, especially for photocatalysts calcined at high temperature, consisting of highly crystalline pure anatase, in which the rate of detrimental charge carrier recombination was reduced. For both series of doped materials, high doping levels appear to limit the semiconductor photoactivity, probably due to the formation of a progressively increasing number of charge recombination centres. The EPR characterisation of the investigated doped TiO(2) samples evidenced the presence of nitrogen containing species (nitric oxide radical encapsulated in micro-void, with no photoactivity, and N(b)˙ species, active in visible light sensitisation) and of titanium reduced centres Ti(3+), due to charge imbalance consequent to dopant introduction in the TiO(2) lattice either in anionic (F(-)) or in cationic form (S(6+)).
Download full-text PDF |
Source |
---|---|
http://dx.doi.org/10.1039/c0pp00182a | DOI Listing |
Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!