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Influence of carrier lifetime on performance of silicon p-i-n variable optical attenuators fabricated on submicrometer rib waveguides. | LitMetric

AI Article Synopsis

  • - The study explored how the carrier lifetime affects the performance of silicon p-i-n variable optical attenuators (VOAs) in submicrometer silicon rib waveguides, comparing those with and without intentional defects.
  • - Carrier lifetime was about 1 ns for VOAs with defects and 7 ns for those without, influenced by different types of recombination mechanisms.
  • - Results showed that VOAs with defects had lower attenuation efficiency (0.2-0.7 dB/mA) and slower bandwidth (40-100 MHz) compared to those without defects (0.04-0.1 dB/mA and over 200 MHz), highlighting a trade-off between attenuation and response speed linked to carrier lifetime.

Article Abstract

We investigated influence of carrier lifetime on performance of silicon (Si) p-i-n variable optical attenuators (VOAs) on submicrometer Si rib waveguides. VOAs were fabricated with and without intentional implantation of lattice defects into their intrinsic region. Carrier lifetime was measured by pulse responses for normal incidence of picosecond laser pulse of 775 nm to the VOA, as approximately 1 ns and approximately 7 ns for the VOAs with and without defects, respectively. Carrier lifetime is determined by the sum of surface recombination and Auger recombination for VOAs without defects, while Schockley-Read-Hall recombination is dominant for the VOA with defects. As a result, attenuation efficiency (dB/mA) is 0.2-0.7 and 0.04-0.1, while 3-dB bandwidth is 40-100 MHz and over 200 MHz for the VOAs with and without defects, respectively. There is a trade-off relation between attenuation and response speed of the VOAs with respect to carrier lifetime i.e., attenuation efficiency is linearly proportional to the carrier lifetime, whereas response speed is inversely proportional to it.

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Source
http://dx.doi.org/10.1364/OE.18.011282DOI Listing

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