AI Article Synopsis
- * This enhanced performance is attributed to the greater free-carrier absorption in a-Si:H compared to crystalline silicon, with a measured absorption coefficient of approximately alpha = 1.6310(-16)N cm(-1).
- * We also observed a modulation time of about 400 picoseconds, highlighting how surface recombination influences performance in a-Si:H waveguides, making it a promising option for integrated CMOS photonics.
Article Abstract
We demonstrate broadband all-optical modulation in low loss hydrogenated-amorphous silicon (a-Si:H) waveguides. Significant modulation (approximately 3 dB) occurs with a device of only 15 microm without the need for cavity interference effects in stark contrast to an identical crystalline silicon waveguide. We attribute the enhanced modulation to the significantly larger free-carrier absorption effect of a-Si:H, estimated here to be alpha = 1.6310(-16)N cm(-1). In addition, we measured the modulation time to be only tau(c) approximately 400 ps, which is comparable to the recombination rate measured in sub-micron crystalline silicon waveguides, illustrating the strong dominance of surface recombination in similar sized (460 nm x 250 nm) a-Si:H waveguides. Consequently, a-Si:H could serve as a high performance platform for backend integrated CMOS photonics.
Download full-text PDF |
Source |
|---|---|
| http://dx.doi.org/10.1364/OE.18.009809 | DOI Listing |
Publication Analysis
Top Keywords
Similar Publications
Want AI Summaries of new PubMed Abstracts delivered to your In-box?
Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!