Storing and retrieving a quantum state of light on demand, without corrupting the information it carries, is an important challenge in the field of quantum information processing. Classical measurement and reconstruction strategies for storing light must necessarily destroy quantum information as a consequence of the Heisenberg uncertainty principle. There has been significant effort directed towards the development of devices-so-called quantum memories-capable of avoiding this penalty. So far, successful demonstrations of non-classical storage and on-demand recall have used atomic vapours and have been limited to low efficiencies, of less than 17 per cent, using weak quantum states with an average photon number of around one. Here we report a low-noise, highly efficient (up to 69 per cent) quantum memory for light that uses a solid-state medium. The device allows the storage and recall of light more faithfully than is possible using a classical memory, for weak coherent states at the single-photon level through to bright states of up to 500 photons. For input coherent states containing on average 30 photons or fewer, the performance exceeded the no-cloning limit. This guaranteed that more information about the inputs was retrieved from the memory than was left behind or destroyed, a feature that will provide security in communications applications.
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http://dx.doi.org/10.1038/nature09081 | DOI Listing |
Nano Lett
January 2025
Center for Spintronics and Quantum Systems, State Key Laboratory for Mechanical Behavior of Materials, School of Materials Science and Engineering, Xi'an Jiaotong University, Xi'an, Shaanxi 710049, China.
The ferroelectric tunnel junction (FTJ) is a competitive candidate for post-Moore nonvolatile memories due to its low power consumption and nonvolatility, with its performance being strongly dependent on the conditions for contact between the ferroelectric material and the metal electrode. The development of two-dimensional materials in recent years has offered new opportunities such as functional metal layers, which is challenging for traditional FTJ systems. Here, we introduce the newly discovered ferroelectric metal WTe as the electrode to construct WTe/α-InSe/Au ferroelectric semiconductor junctions.
View Article and Find Full Text PDFNeurol Genet
February 2025
Memory Center, Keio University School of Medicine, Tokyo, Japan.
Background And Objectives: A previous postmortem study of men with Christianson syndrome, a disorder caused by loss-of-function mutations in the gene , reported a mechanistic link between pathologic tau accumulation and progressive symptoms such as cerebellar atrophy and cognitive decline. This study aimed to characterize the relationships between neuropathologic manifestations and tau accumulation in heterozygous women with mutation.
Methods: We conducted a multimodal neuroimaging and plasma biomarker study on 3 middle-aged heterozygous women with mutations (proband 1: mid-50s; proband 2: early 50s; proband 3: mid-40s) presenting with progressive extrapyramidal symptoms.
Chemistry
January 2025
Indian Institute of Science Education and Research (IISER), Chemistry, Dr. Homi Bhabha Road, Pashan, 411008, Pune, INDIA.
Metal-organic frameworks (MOFs) are a fascinating class of structured materials with diverse functionality originating from the distinctive physicochemical properties. This review focuses on the specific chemical design of geometrically frustrated MOFs along with the origin of the intriguing magnetic properties. We have discussed the arrangement of spin centres (metal and ligand) which are responsible for the unusual magnetic phenomena in MOFs.
View Article and Find Full Text PDFACS Nano
January 2025
Department of Physics and Astronomy & Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, Nebraska 68588-0299, United States.
A spin valve represents a well-established device concept in magnetic memory technologies, whose functionality is determined by electron transmission, controlled by the relative alignment of magnetic moments of the two ferromagnetic layers. Recently, the advent of valleytronics has conceptualized a valley spin valve (VSV)─a device that utilizes the valley degree of freedom and spin-valley locking to achieve a similar valve effect without relying on magnetism. In this study, we propose a nonvolatile VSV (-VSV) based on a two-dimensional (2D) ferroelectric semiconductor where resistance of -VSV is controlled by a ferroelectric domain wall between two uniformly polarized domains.
View Article and Find Full Text PDFACS Mater Lett
January 2025
Department of Materials and London Centre for Nanotechnology, Imperial College London, South Kensington Campus, Exhibition Road, SW7 2AZ London, United Kingdom.
Quantum technologies using electron spins have the advantage of employing chemical qubit media with tunable properties. The principal objective of material engineers is to enhance photoexcited spin yields and quantum spin relaxation. In this study, we demonstrate a facile synthetic approach to control spin properties in charge-transfer cocrystals consisting of 1,2,4,5-tetracyanobenzene (TCNB) and acetylated anthracene.
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