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Sub-5 nm Silicon Nanopore Sensors: Scalable Fabrication via Self-Limiting Metal-Assisted Chemical Etching.
ACS Appl Mater Interfaces
January 2025
Division of Micro and Nanosystems, KTH Royal Institute of Technology, Malvinas väg 10, Stockholm 100 44, Sweden.
Solid-state nanopores offer unique possibilities for biomolecule sensing; however, scalable production of sub-5 nm pores with precise diameter control remains a manufacturing challenge. In this work, we developed a scalable method to fabricate sub-5 nm nanopores in silicon (Si) nanomembranes through metal-assisted chemical etching (MACE) using gold nanoparticles. Notably, we present a previously unreported self-limiting effect that enables sub-5 nm nanopore formation from both 10 and 40 nm nanoparticles in the 12 nm thick monocrystalline device layer of a silicon-on-insulator substrate.
View Article and Find Full Text PDFUltrasensitive and selective impedance paper-based analytical device through Dual-C imprinted sensor for determination of carcinoembryonic antigen and C-reactive protein.
Mikrochim Acta
January 2025
Department of Chemistry and Center of Excellence for Innovation in Chemistry, Faculty of Science, Ubon Ratchathani University, Ubon Ratchathani, 34190, Thailand.
Carcinoembryonic antigen (CEA) and C-reactive protein (CRP) are biomacromolecules known as cancer and inflammatory markers. Thus, they play a crucial role in early cancer diagnosis, post-treatment recurrence detection, and tumor risk assessment. This paper describes the development of an ultrasensitive and selective imprinted paper-based analytical device (PAD) as impedance sensor for determination of CEA and CRP in serum samples for point-of-care testing (POCT).
View Article and Find Full Text PDFConvergent evidence for the temperature-dependent emergence of silicification in terrestrial plants.
Nat Commun
January 2025
Ministry of Education Key Laboratory of Environment Remediation and Ecological Health, College of Environmental & Resource Sciences, Zhejiang University, Hangzhou, 310058, China.
Research on silicon (Si) biogeochemistry and its beneficial effects for plants has received significant attention over several decades, but the reasons for the emergence of high-Si plants remain unclear. Here, we combine experimentation, field studies and analysis of existing databases to test the role of temperature on the expression and emergence of silicification in terrestrial plants. We first show that Si is beneficial for rice under high temperature (40 °C), but harmful under low temperature (0 °C), whilst a 2 °C increase results in a 37% increase in leaf Si concentrations.
View Article and Find Full Text PDFCategorization of 34 computational methods to detect spatially variable genes from spatially resolved transcriptomics data.
Nat Commun
January 2025
Department of Statistics and Data Science, University of California, Los Angeles, CA, 90095-1554, USA.
In the analysis of spatially resolved transcriptomics data, detecting spatially variable genes (SVGs) is crucial. Numerous computational methods exist, but varying SVG definitions and methodologies lead to incomparable results. We review 34 state-of-the-art methods, classifying SVGs into three categories: overall, cell-type-specific, and spatial-domain-marker SVGs.
View Article and Find Full Text PDFAccurate operando measurement of AlGaN/GaN HEMTs channel temperature and optimization of thermal design.
Nanotechnology
January 2025
Electronic Sci.&Eng., Xi'an Jiaotong University, 28 Xianning West Road,Beilin District, Xi 'an, Shaanxi Province, China, Xi'an, 710049, CHINA.
The accurate estimation of the temperature distribution of the GaN based power devices and optimization of the device structure is of great significance to possibly solve the self-heating problem, which hinders the further enhancement of the device performances. We present here the operando temperature measurement with high spatial resolution using Raman spectroscopy of AlGaN/GaN high electron mobility transistors (HEMTs) with different device structures and explore the optimization of the device thermal design accordingly. The lateral and depth temperature distributions of the single-finger HEMT were characterized.
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