This study evaluated the effect of resin monomer composition on crystal growth at the interface between the resin/bioglass composites and water. Light-cured resin that contained 2-bis[4(2-hydroxy-3-methacryloyloxy-propyloxy)-phenyl], 2-hydroxyethyl methacrylate, and triethylene glycol dimethacrylate with different compositions were used. Resin/bioglass composites were prepared with 40 mass% bioglass and 60 mass% resin. The resin/bioglass composites were stored in deionized distilled water for 24 h (control group) or 3-12 months (experimental groups). After water storage, the disk surfaces were examined by light- and scanning electron microscopy. Chemical states of the crystals were analyzed by laser-Raman spectroscopy and micro-X-ray diffractometry. The microscopic analysis showed crystal on the resin disks surface after six months of water storage for hydrophilic resins. However, there was no crystal formation in the control and the experimental groups of specimens of hydrophobic resins. Raman analysis showed the chemical states of the crystals formed on the resin matrix and bioglass to be different. The micro-X-ray analysis of crystals on resin disks identified them to be calcium carbonate. This crystal formation occurred in water instead of simulated body fluid. In conclusion, the resin monomer compositions affected the ability to induce crystal growth on the surfaces of disks containing bioglass.
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http://dx.doi.org/10.1002/jbm.b.31632 | DOI Listing |
J Phys Chem Lett
January 2025
College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), State Key Laboratory of Organic Electronics and Information Displays, Nanjing University of Posts and Telecommunications, Nanjing, Jiangsu 210023, P.R. China.
Heat dissipation has become a critical challenge in modern electronics, driving the need for a revolution in thermal management strategies beyond traditional packaging materials, thermal interface materials, and heat sinks. Cubic boron arsenide (c-BAs) offers a promising solution, thanks to its combination of high thermal conductivity and high ambipolar mobility, making it highly suitable for applications in both electronic devices and thermal management. However, challenges remain, particularly in the large-scale synthesis of a high-quality material and the tuning of its physical properties.
View Article and Find Full Text PDFMater Horiz
January 2025
Department of Energy Conversion and Storage, Technical University of Denmark, Fysikvej, Building 310, 2800 Kgs. Lyngby, Denmark.
The symmetry breaking that is formed when oxide layers are combined epitaxially to form heterostructures has led to the emergence of new functionalities beyond those observed in the individual parent materials. SrTiO-based heterostructures have played a central role in expanding the range of functional properties arising at the heterointerface and elucidating their mechanistic origin. The heterostructure formed by the epitaxial combination of spinel γ-AlO and perovskite SrTiO constitutes a striking example with features distinct from perovskite/perovskite counterparts such as the archetypical LaAlO/SrTiO heterostructure.
View Article and Find Full Text PDFNanomaterials (Basel)
December 2024
School of Physics and Information Technology, Shaanxi Normal University, Xi'an 710062, China.
During the preparation of single-domain (S-D) REBaCuO (RE-123) superconducting bulks, the seed crystals can serve as templates for crystal growth, guiding the newly formed crystals to grow in a specific direction, thereby ensuring the consistency of the crystal orientation within the sample. However, the infiltration temperature is typically restricted to approximately 1050 °C when employing NdBaCuO (Nd-123) crystal seeds in the traditional top-seeded infiltration growth (TSIG) technique for producing single-domain Y-123 bulk superconductors. In the present study, to overcome the temperature limitations of the heat treatment process, the optimized YO +011 IG (011 refers to BaCuO powder) method was employed to fabricate a group of single-domain Y-123 bulks with a high-temperature infiltration (1000-1300 °C).
View Article and Find Full Text PDFNanomaterials (Basel)
December 2024
Division of Nanotechnology and Semiconductor Engineering, Pukyong National University, Busan 49315, Republic of Korea.
This study reveals the significant role of the pre-melting process in growing high-quality (100) β-GaO single crystals from 4N powder (99.995% purity) using the edge-defined film-fed growth (EFG) method. Among various bulk melt growth methods, the EFG method boasts a fast growth rate and the capability of growing multiple crystals simultaneously, thus offering high productivity.
View Article and Find Full Text PDFSmall
January 2025
Key Laboratory of Multiscale Spin Physics, Ministry of Education, School of Physics and Astronomy, Beijing Normal University, Beijing, 100875, P. R. China.
The etch-engineering is a feasible avenue to tailor the layer number and morphology of 2D layered materials during the chemical vapor deposition (CVD) growth. However, less reports strengthen the etch-engineering used in the fabrication of high-quality transition metal dichalcogenide (TMD) materials with tunable layers and desirable morphologies to improve their prominent performance in electronic and optoelectronic devices. Here, an etching-and-growth coexistence method is reported to directly synthesize high-quality, high-symmetric MoS bilayers with versatile morphologies via CVD.
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