A ten-channel far-infrared laser interferometer which is routinely used to measure the spatial and temporal behavior of the electron density profile on the tokamak fusion test reactor is described, and representative results are presented. This system has been designed for remote operation in the very hostile environment of a fusion reactor. The possible expansion of the system to include polarimetric measurements is briefly outlined.
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http://dx.doi.org/10.1364/AO.26.004469 | DOI Listing |
Nanophotonics
April 2024
Faculty of Physics, University of Warsaw, ul. L. Pasteura 5, 02-093 Warsaw, Poland.
Spectroscopy of shallow donors is a tool to test theoretical models and to reveal properties of semiconductors. In this work we consider intra-shallow impurity transitions by studying a CdTe/(Cd, Mg)Te structure grown by a molecular beam epitaxy in which both a CdTe quantum well and (Cd, Mg)Te barries are uniformly doped with iodine donors. Measurements of a photocurrent (PC) at the far-infrared were carried out at 4.
View Article and Find Full Text PDFThe application of As-Se chalcogenide glasses in high-power laser delivery is hindered by their low damage threshold due to their weak chemical bonds. To solve this, we introduced germanium elements into the As-Se glasses and optimized the composition to raise the glass transition temperature (T) and enhance the laser damage threshold (LDT). From the correlation among various parameters including T, LDT, and fiber loss, we concluded an optimized composition of GeAsSe/GeAsSe glass.
View Article and Find Full Text PDFThis article presents a novel approach to targeted 4f pulse shaping using phase plates fabricated by single-point diamond turning (SPDT) machining. The manufacturing of the phase plates using SPDT is versatile, cost-effective, fast, robust, and applicable across a wide range of optical materials, spanning from visible to far-infrared spectra (e.g.
View Article and Find Full Text PDFMolecules
September 2024
Southern Polytechnic College of Engineering and Engineering Technology, Kennesaw State University, Marietta, GA 30060, USA.
Quaternary (AlGa)InP alloys grown on GaAs substrates have recently gained considerable interest in photonics for improving visible light-emitting diodes, laser diodes, and photodetectors. With two degrees of freedom (x, y) and keeping growth on a lattice-matched GaAs substrate, the (AlGa)InP alloys are used for tuning structural, phonon, and optical characteristics in different energy regions from far-infrared (FIR) → near-infrared (NIR) → ultraviolet (UV). Despite the successful growth of (AlGa)InP/n-GaAs epilayers, limited optical, phonon, and structural characteristics exist.
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