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Visible-Telecom Entangled-Photon Pair Generation with Integrated Photonics: Guidelines and a Materials Comparison.
ACS Photonics
January 2025
Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106, United States.
Correlated photon-pair sources are key components for quantum computing, networking, synchronization, and sensing applications. Integrated photonics has enabled chip-scale sources using nonlinear processes, producing high-rate time-energy and polarization entanglement at telecom wavelengths with sub-100 microwatt pump power. Many quantum systems operate in the visible or near-infrared ranges, necessitating visible-telecom entangled-pair sources for connecting remote systems via entanglement swapping and teleportation.
View Article and Find Full Text PDFShaping the Emission Directivity of Single Quantum Dots in Dielectric Nanodisks Exploiting Mie Resonances.
ACS Nano
January 2025
Institute of Photonics and of Nanotechnologies- National Researcher Council (IFN-CNR), LNESS Laboratory, Piazza Leonardo Da Vinci 32, 20133 Milano, Italy.
Manipulating the optical landscape of single quantum dots (QDs) is essential to increase the emitted photon output, enhancing their performance as chemical sensors and single-photon sources. Micro-optical structures are typically used for this task, with the drawback of a large size compared to the embedded single emitters. Nanophotonic architectures hold the promise to modify dramatically the emission properties of QDs, boosting light-matter interactions at the nanoscale, in ultracompact devices.
View Article and Find Full Text PDFGaAs nano-ridge laser diodes fully fabricated in a 300-mm CMOS pilot line.
Nature
January 2025
imec, Leuven, Belgium.
Silicon photonics is a rapidly developing technology that promises to revolutionize the way we communicate, compute and sense the world. However, the lack of highly scalable, native complementary metal-oxide-semiconductor (CMOS)-integrated light sources is one of the main factors hampering its widespread adoption. Despite considerable progress in hybrid and heterogeneous integration of III-V light sources on silicon, monolithic integration by direct epitaxy of III-V materials remains the pinnacle of cost-effective on-chip light sources.
View Article and Find Full Text PDFLead Catalyzed GaAs Nanowires Grown by Molecular Beam Epitaxy.
Nanomaterials (Basel)
November 2024
Faculty of Physics, St. Petersburg State University, Universitetskaya Emb. 13B, 199034 St. Petersburg, Russia.
This study investigates the growth of gallium arsenide nanowires, using lead as a catalyst. Typically, nanowires are grown through the vapor-solid-liquid mechanism, where a key factor is the reduction in the nucleation barrier beneath the catalyst droplet. Arsenic exhibits limited solubility in conventional catalysts; however, this research explores an alternative scenario in which lead serves as a solvent for arsenic, while gallium and lead are immiscible liquids.
View Article and Find Full Text PDFMode-locked lasers are of interest for applications such as biological imaging, nonlinear frequency conversion, and single-photon generation. In the infrared, chip-integrated mode-locked lasers have been demonstrated through integration of laser diodes with low-loss photonic circuits. However, additional challenges, such as a higher propagation loss and smaller alignment tolerances, have prevented the realization of such lasers in the visible range.
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