AI Article Synopsis
- Researchers studied room temperature photovoltaic detection using large area double-grating-gate heterostructures made of InGaP/InGaAs/GaAs in the sub-THz range (0.24 THz).
- They combined semi-quantitative estimates of detection length with calculations of electric fields generated by the terahertz radiation.
- The results indicated that detection primarily occurs in areas where strong oscillating electric fields are present in the depleted sections of the channel.
Article Abstract
Room temperature photovoltaic non-resonant detection by large area double-grating-gate InGaP/InGaAs/GaAs heterostructures was investigated in sub-THz range (0.24 THz). Semi-quantitative estimation of the characteristic detection length combined with self-consistent calculations of the electric fields excited in the structure by incoming terahertz radiation allowed us to interpret quantitatively the results and conclude that this detection takes place mainly in the regions of strong oscillating electric field excited in depleted portions of the channel.
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| http://dx.doi.org/10.1364/OE.18.006024 | DOI Listing |
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