In this work micro-Raman scattering experiments have been performed in LiNbO(3):Tm(3+) samples with waveguides fabricated by Zn(2+) in-diffusion. The results shown that Zn(2+) ions enter the lattice in Li(+) sites, but also in interstitial positions. This produces a compaction of the lattice close to the surface of the sample, generating the waveguide. It is shown that this region is surrounded by a different area in which the lattice is relaxed to recover the characteristic lattice parameters of LiNbO(3):Tm(3+).
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http://dx.doi.org/10.1364/OE.18.005449 | DOI Listing |
Langmuir
January 2025
Interdisciplinary Research Center in Biomedical Materials (IRCBM), COMSATS University Islamabad (CUI), Lahore Campus, Lahore 54000, Pakistan.
By integrating iron-cobalt squarate bimetallic metal-organic framework (Fe-Co-SqBMoF) based smart material (SM) with functional DNA (fDNA), we designed a target responsive fDNA@Fe-Co-SqBMoF bioelectrode that exhibits recognition induced switchable response to serve as a reagentless single step electrochemical apta-switch (REA). The construct takes advantage of fDNA ability to bind and concentrate target on the receptor interface, while Fe-Co-SqBMoF@SM multifeatures to serve as an immobilization matrix and a signal generating electrochemical switch. Fe-Co-SqBMoF was introduced to prepare a redox active pencil graphite electrode (PGE), while fDNA (aptamer) was decorated on the receptor PGE to impart specificity and selectivity.
View Article and Find Full Text PDFMaterials (Basel)
November 2024
Department of Physics and Chemistry Emilio Segrè, University of Palermo, Via Archirafi 36, 90123 Palermo, Italy.
Silicon carbide is a wide-bandgap semiconductor useful in a new class of power devices in the emerging area of high-temperature and high-voltage electronics. The diffusion of SiC devices is strictly related to the growth of high-quality substrates and epitaxial layers involving high-temperature treatment processing. In this work, we studied the thermal stability of substrates of 4H-SiC in an inert atmosphere in the range 1600-2000 °C.
View Article and Find Full Text PDFSmall
December 2024
Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-sen University, Guangzhou, 510275, China.
Vanadium dioxide as a strongly correlated electron material undergoes metal-insulator phase transitions and ferroelastic domain switching which highly couple to local strain distribution. Understanding the mechanisms and achieving the modulations require precise and high-resolution characterization of strain in vanadium dioxide. Micro-Raman spectroscopy is widely used to nondestructively characterize the strain on the surface of materials.
View Article and Find Full Text PDFEnviron Pollut
January 2025
Department of Vice Chancellor for Health Affairs, Health Education and Promotion Group, Zahedan University of Medical Sciences, Zahedan, Iran.
ACS Appl Mater Interfaces
December 2024
Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States.
Boron (B)-substituted wurtzite AlN (AlBN) is a recently discovered wurtzite ferroelectric material that offers several advantages over ferroelectric HfZrO and PbZrTiO. Such benefits include a relatively low growth temperature as well as a thermally stable, and thickness-stable ferroelectric polarization; these factors are promising for the development of ferroelectric nonvolatile random-access memory (FeRAM) that are CMOS-compatible, scalable, and reliable for storing data in harsh environments. However, wurtzite ferroelectric materials may undergo exacerbated self-heating upon polarization switching relative to other ferroelectric materials; the larger energy loss is anticipated due to the higher coercive field and remanent polarization.
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