Current techniques for nondestructive quality evaluation of solder bumps in microelectronic packages have their own limitations and are unsuitable for in-line inspection because of high cost and low throughput. In order to meet requirements of quality inspection of electronic packages, a nondestructive and noncontact solder bump inspection system is being developed using laser ultrasound and interferometer techniques. This system uses a pulsed Nd:YAG laser to induce ultrasound in electronic packages in the thermoelastic regime; it then measures the transient out-of-plane displacement responses with an ultrasonic arrival on the surface of the packages using laser interferometer technique. This paper presents a systematic study of defect detection in flip chip solder bumps using a combined modal and signal analysis method. The correlation between the finite element (FE) modal analysis and wavelet analysis of laser ultrasound signals has been studied. With the help of FE modal analysis, the modes of flip chip packages sensitive to open bumps were predicted for further signal processing before conducting any experiments. The decomposed signal components sensitive to specific defects were extracted and analyzed with discrete wavelet transform. The results show that wavelet analysis increases the measurement sensitivity of the flip chip solder bump inspection compared with existing methods.
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http://dx.doi.org/10.1109/TUFFC.2010.1496 | DOI Listing |
Nat Commun
January 2025
Université de Lorraine, CNRS, Inria, LORIA, F-54000, Nancy, France.
The main obstacle to large scale quantum computing are the errors present in every physical qubit realization. Correcting these errors requires a large number of additional qubits. Two main avenues to reduce this overhead are (i) low-density parity check (LDPC) codes requiring very few additional qubits to correct errors (ii) cat qubits where bit-flip errors are exponentially suppressed by design.
View Article and Find Full Text PDFSensors (Basel)
January 2025
Research and Development Center of Optoelectronic Hybrid IC, Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China.
Short-wave infrared (SWIR) imaging has a wide range of applications in civil and military fields. Over the past two decades, significant efforts have been devoted to developing high-resolution, high-sensitivity, and cost-effective SWIR sensors covering the spectral range from 0.9 μm to 3 μm.
View Article and Find Full Text PDFInt J Biol Sci
January 2025
Gastric Cancer Center, Department of General Surgery, The First Affiliated Hospital of Nanjing Medical University, Nanjing, China.
Chemoresistance severely deteriorates the prognosis of advanced gastric cancer (GC) patients. Several studies demonstrated that (HP)-positive GC patients showed better outcomes after receiving chemotherapy than HP-negative ones. This study aims to confirm the role of HP in GC chemotherapy and to study the underlying mechanisms.
View Article and Find Full Text PDFOpen Res Eur
November 2024
Quantum Electronics, Physikalisch-Technische Bundesanstalt, Braunschweig, Lower Saxony, 38116, Germany.
We discuss the flip-chip mounting process of photodiodes and fiber sleeves on silicon substrates to meet the increasing demand for fabrication of highly integrated and hybrid quantum circuits for operation at cryogenic temperatures. To further increase the yield and success rate of the flip-chip procedure, the size of the gold stud bumps, and flip-chip parameters were optimized. Moreover, to connect optical fibers to the photodiodes in an optimal position, the fiber sleeves were aligned with specially fabricated alignment circles before applying thermocompression with the flip-chip machine.
View Article and Find Full Text PDFTo further enhance the performance of GaN-based thin-film flip-chip light-emitting diodes (TFFC-LEDs), we designed and fabricated two sets of high-power blue chips with conventional and reflective current-blocking layers (CBL) The conventional CBL is composed of SiO, whereas the reflective CBL consists of SiO and a distributed Bragg reflector (DBR). We systematically characterized their optoelectronic performance. The results indicate that at an injection current of 350 mA, the light output power (LOP) and external quantum efficiency (EQE) of the TFFC-LEDs with a reflective CBL increased by 4.
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