AI Article Synopsis
- The research focuses on integrating GaAs nanowire-based light-emitting diodes (NW-LEDs) on silicon (Si) substrates using a selective-area growth technique.
- The team successfully created vertically aligned GaAs/AlGaAs nanowires featuring a radial p-n junction that demonstrates effective electroluminescence.
- The findings suggest that the current technology could pave the way for advanced integration of III-V nanowires with silicon for future electronic and photonic applications.
Article Abstract
We report on integration of GaAs nanowire-based light-emitting-diodes (NW-LEDs) on Si substrate by selective-area metalorganic vapor phase epitaxy. The vertically aligned GaAs/AlGaAs core-multishell nanowires with radial p-n junction and NW-LED array were directly fabricated on Si. The threshold current for electroluminescence (EL) was 0.5 mA (current density was approximately 0.4 A/cm(2)), and the EL intensity superlinearly increased with increasing current injections indicating superluminescence behavior. The technology described in this letter could help open new possibilities for monolithic- and on-chip integration of III-V NWs on Si.
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| http://dx.doi.org/10.1021/nl9041774 | DOI Listing |
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Article Synopsis
- Femtosecond optical pump-probe spectroscopy was used to study the ultrafast carrier relaxation dynamics in bare GaAs and a GaAs/AlGaAs semiconductor nanowire array.
- A transparent film containing a vertically oriented nanowire array was created using a spin coating and peeling off method for transient absorption measurements.
- The results showed that while carrier thermalization happens in less than 0.5 picoseconds and is nearly unaffected by AlGaAs coating, the cooling and thermal dissipation times increased significantly due to the coating, highlighting important band-gap changes crucial for flexible optoelectronic device development.
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