The morphology of the photoactive layer used in the bulk heterojunction photovoltaic devices is crucial for efficient charge generation and their collection at the electrodes. We investigated the solvent vapor annealing and thermal annealing effect of an alternating phenylenevinylene copolymer P:PCBM blend on its morphology and optical properties. The UV-visible absorption spectroscopy shows that both solvent and thermal annealing can result in self-assembling of copolymer P to form an ordered structure, leading to enhanced absorption in the red region and hole transport enhancement. By combining the solvent and thermal annealing of the devices, the power conversion efficiency is improved. This feature was attributed to the fact that the PCBM molecules begin to diffuse into aggregates and together with the ordered copolymer P phase form bicontinuous pathways in the entire layer for efficient charge separation and transport. Furthermore, the measured photocurrent also suggests that the space charges no longer limit the values of the short circuit current (J(sc)) and fill factor (FF) for solvent-treated and thermally annealed devices. These results indicate that the higher J(sc) and PCE for the solvent-treated and thermally annealed devices can be attributed to the phase separation of active layers, which leads to a balanced carrier mobility. The overall PCE of the device based on the combination of solvent annealing and thermal annealing is about 3.7 %.
Download full-text PDF |
Source |
---|---|
http://dx.doi.org/10.1021/am900728f | DOI Listing |
Int J Mol Sci
December 2024
Department of Physics and Astronomy, Rowan University, Glassboro, NJ 08028, USA.
Biocompatible materials fabricated from natural protein polymers are an attractive alternative to conventional petroleum-based plastics. They offer a green, sustainable fabrication method while also opening new applications in biomedical sciences. Available from several sources in the wild and on domestic farms, silk is a widely used biopolymer and one of the strongest natural materials.
View Article and Find Full Text PDFMaterials (Basel)
January 2025
Department of Physics, Changwon National University, Changwon 51140, Republic of Korea.
A mechanically robust flexible transparent conductor with high thermal and chemical stability was fabricated from welded silver nanowire networks (w-Ag-NWs) sandwiched between multilayer graphene (MLG) and polyimide (PI) films. By modifying the gas flow dynamics and surface chemistry of the Cu surface during graphene growth, a highly crystalline and uniform MLG film was obtained on the Cu foil, which was then directly coated on the Ag-NW networks to serve as a barrier material. It was found that the highly crystalline layers in the MLG film compensate for structural defects, thus forming a perfect barrier film to shield Ag NWs from oxidation and sulfurization.
View Article and Find Full Text PDFMaterials (Basel)
December 2024
Department of Mechanical Engineering, The Pennsylvania State University, University Park, PA 16803, USA.
Traditional defect recovery methods rely on high-temperature annealing, often exceeding 750 °C for FeCrAl. In this study, we introduce electron wind force (EWF)-assisted annealing as an alternative approach to mitigate irradiation-induced defects at significantly lower temperatures. FeCrAl samples irradiated with 5 MeV Zr ions at a dose of 10 cm were annealed using EWF at 250 °C for 60 s.
View Article and Find Full Text PDFDalton Trans
January 2025
Department of Solid State Sciences, CoCooN research group, Ghent University, Krijgslaan 281 (S1), 9000 Gent, Belgium.
Phosphorous-containing materials are used in a wide array of fields, from energy conversion and storage to heterogeneous catalysis and biomaterials. Among these materials, organic-inorganic metal phosphonate solids and thin films present an interesting option, due to their remarkable thermal and chemical stability. Yet, the synthesis of phosphonate hybrids by vapour phase thin film deposition techniques remains largely unexplored.
View Article and Find Full Text PDFACS Appl Mater Interfaces
January 2025
Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu 300093, Taiwan.
Ultrathin indium oxide films show great potential as channel materials of complementary metal oxide semiconductor back-end-of-line transistors due to their high carrier mobility, smooth surface, and low leakage current. However, it has severe thermal stability problems (unstable and negative threshold voltage shifts at high temperatures). In this paper, we clarified how the improved crystallinity of indium oxide by using ultrahigh-temperature rapid thermal O annealing could reduce donor-like defects and suppress thermal-induced defects, drastically enhancing thermal stability.
View Article and Find Full Text PDFEnter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!