A single nanostructured porous tin oxide ribbon, with its length, width and thickness of more than 1 mm, around 20 microm and around 20 nm, respectively, were fabricated using electrospinning, and electrically characterized in a temperature range between 300 K and 90 K, a magnetic field range from -9 to 9 T (negative sign stands for the reverse direction), and the environment of air and vacuum. The electrical conductivity (sigma) of the ribbon was found insensitive to magnetic field, but sensitive to temperature and environment. Its response time to air evacuation is 67+7 s. The strong temperature dependence of sigma in vacuum is controlled by the three-dimension variable-range hopping of localized electrons.
Download full-text PDF |
Source |
|---|---|
| http://dx.doi.org/10.1166/jnn.2010.2151 | DOI Listing |
Publication Analysis
Top Keywords
Similar Publications
In this work, a specially designed multilayer indium tin oxide (ITO) mesh structure metasurface was proposed as a microwave absorber, achieving both excellent angle-insensitive broadband absorption and high shielding effectiveness (SE). It features gradually changing surface resistance ( ), to expand the absorption bandwidth while maintaining high SE. Also, a folded square ring metasurface was designed to effectively suppress surface wave grating lobes, as well as to reduce the unit size of the metasurface and thus the absorber.
View Article and Find Full Text PDFEpitaxial CuO Thin Films Deposited from Solution: the Enabling Role of Cu Diffusion into the GaAs Substrate.
ACS Appl Mater Interfaces
January 2025
Department of Materials Engineering, Ben-Gurion University of the Negev, Beer-Sheva 8410501, Israel.
Cuprous oxide (CuO) thin films were chemically deposited from a solution onto GaAs(100) and (111) substrates using a simple three-component solution at near-ambient temperatures (10-60 °C). Interestingly, a similar deposition onto various other substrates including Si(100), Si(111), glass, fluorine-doped tin oxide, InP, and quartz resulted in no film formation. Films deposited on both GaAs(100) and (111) were found alongside substantial etching of the substrates.
View Article and Find Full Text PDFSynergistic Improvement of Narrow Bandgap PbS Quantum Dot Solar Cells through Surface Ligand Engineering, Near-Infrared Spectral Matching, and Enhanced Electrode Transparency.
ACS Appl Mater Interfaces
January 2025
CSIR-National Chemical Laboratory, Dr. Homi Bhabha Road, Pune 411008, India.
The tunability of the energy bandgap in the near-infrared (NIR) range uniquely positions colloidal lead sulfide (PbS) quantum dots (QDs) as a versatile material to enhance the performance of existing perovskite and silicon solar cells in tandem architectures. The desired narrow bandgap (NBG) PbS QDs exhibit polar (111) and nonpolar (100) terminal facets, making effective surface passivation through ligand engineering highly challenging. Despite recent breakthroughs in surface ligand engineering, NBG PbS QDs suffer from uncontrolled agglomeration in solid films, leading to increased energy disorder and trap formation.
View Article and Find Full Text PDFThiazolidinone-Based Electron-Collecting Monolayers for n-i-p Perovskite Solar Cells.
Chem Asian J
January 2025
Kyoto University - Uji Campus: Kyoto Daigaku - Uji Campus, Institute for Chemical Research, Gokasho, 611-0011, Uji, JAPAN.
The development of efficient electron-collecting monolayer materials is desired to lower manufacturing costs and improve the performance of regular (negative-intrinsic-positive, n-i-p) type perovskite solar cells (PSCs). Here, we designed and synthesized four electron-collecting monolayer materials based on thiazolidinone skeletons, with different lowest-unoccupied molecular orbital (LUMO) levels (rhodanine or thiazolidinedione) and different anchoring groups to the transparent electrode (phosphonic acid or carboxylic acid). These molecules, when adsorbed on indium tin oxide (ITO) substrates, lower the work function of ITO, decreasing the energy barrier for electron extraction at the ITO/perovskite interface and improving the device performance.
View Article and Find Full Text PDFFluorescent nanodiamond scintillators for beam diagnostics of EUV and soft X-ray in photolithographic applications.
RSC Adv
January 2025
Institute of Atomic and Molecular Sciences, Academia Sinica Taipei 106 Taiwan
Extreme ultraviolet (EUV) lithography is a cutting-edge technology in contemporary semiconductor chip manufacturing. Monitoring the EUV beam profiles is critical to ensuring consistent quality and precision in the manufacturing process. This study uncovers the practical use of fluorescent nanodiamonds (FNDs) coated on optical image sensors for profiling EUV and soft X-ray (SXR) radiation beams.
View Article and Find Full Text PDFWant AI Summaries of new PubMed Abstracts delivered to your In-box?
Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!