Charge carrier transport and trapping was investigated in organic solar cell structures consisting of poly-3-hexylthiophene blended with the fullerene derivative [6,6]-phenyl-C61-butyric acid methyl ester in 6:5 weight ratio. The analysed devices having solar efficiency of 3.7 per cent were produced in the inverted layer sequence. The fill factor of the IV characteristics was as high as 68 per cent. It was demonstrated that despite of such relatively high fill factor carrier trapping is effectively involved in the charge transport phenomena. The density of the trapping states was evaluated to be up to 10(20) division by 7 x 10(21) cm(-3) and their activation energy was about 0.18 eV. At such high densities these states may probably act as transport states, limiting carrier mobility. The results were analyzed by taking into account carrier thermal generation from traps as well their mobility variation according to the Gaussian disorder model. The mobility parameters obtained by both methods demonstrated good coincidence.
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http://dx.doi.org/10.1166/jnn.2010.1859 | DOI Listing |
J Phys Chem Lett
January 2025
College of Physics Science and Technology, Hebei University, Baoding 071002, China.
Developing the Cd-free electron transport layer (ETL) is a crucial subject in the field of antimony selenide (SbSe) solar cells. At present, the power conversion efficiency (PCE) of the Cd-free SbSe solar cell is still substantially lower than that of CdS-based devices. It is significant to reveal the electron transfer features in SbSe/CdS heterojunction and SbSe/Cd-free ETL heterojunction for development of a Cd-free SbSe solar cell with high PCE.
View Article and Find Full Text PDFProc Natl Acad Sci U S A
January 2025
Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan.
Chiral magnetic textures give rise to unconventional magnetotransport phenomena such as the topological Hall effect and nonreciprocal electronic transport. While the correspondence between topology or symmetry of chiral magnetic structures and such transport phenomena has been well established, a microscopic understanding based on the spin-dependent band structure in momentum space remains elusive. Here, we demonstrate how a chiral magnetic superstructure introduces an asymmetry in the electronic band structure and triggers a nonreciprocal electronic transport in a centrosymmetric helimagnet α-EuP.
View Article and Find Full Text PDFCell Mol Life Sci
January 2025
School of Biomedical Sciences, The University of Hong Kong, Pokfulam, Hong Kong.
C1orf115 has been identified in high-throughput screens as a regulator of multidrug resistance possibly mediated through an interaction with ATP-dependent membrane transporter ABCB1. Here we show that C1orf115 not only shares structural similarities with FACI/C11orf86 to interact with clathrin adaptors to undergo endocytosis, but also induces ABCA1 transcription to promote cholesterol efflux. C1orf115 consists of an N-terminal intrinsically disordered region and a C-terminal α-helix.
View Article and Find Full Text PDFAdv Mater
January 2025
National & Local Joint Engineering Research Center for High-efficiency Display and Lighting Technology, Key Lab for Special Functional Materials of Ministry of Education, School of Nanoscience and Materials Engineering, Henan University, Kaifeng, 475004, China.
The poor efficiency and stability of blue Quantum Dot Light-Emitting diodes (QLED) hinders the practical applications of QLEDs full-color displays. Excessive electron injection, insufficient hole injection, and abundant defects on the surface of quantum dots (QD) are the main issues limiting the performance of blue devices. Herein, an in situ treatment with bipolar small molecule polydentate ligand-guanidine chloride (GACl) is proposed to simultaneously suppress excessive electron injection, patch surface defects of QDs and enhance hole injection.
View Article and Find Full Text PDFSmall Methods
January 2025
Department of Chemistry, Indian Institute of Technology Kanpur, Kanpur, Uttar Pradesh, 208016, India.
Molecular electronics exhibiting resistive-switching memory features hold great promise for the next generation of digital technology. In this work, electrosynthesis of ruthenium polypyridyl nanoscale oligomeric films is demonstrated on an indium tin oxide (ITO) electrode followed by an ITO top contact deposition yielding large-scale (junction area = 0.7 × 0.
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