Luminescent SiN-based multilayers were prepared in a plasma enhanced chemical vapor deposition system followed by subsequently laser crystallization of ultrathin amorphous Si-rich SiN sublayers. The cross-sectional TEM analysis reveals that grain size of Si nanocrystals embedded in the Si-rich SiN sublayers is independent of the laser fluence, while the grain density can be well controlled by the laser fluence. The devices containing the laser crystallized multilayers show a low turn-on voltage of 5 V and exhibit strong green light emission under both optical and electrical excitations. Moreover, the device after laser-irradiated at 554 mJ/cm(2) shows a significantly enhanced EL intensity as well as external quantum efficiency compared with the device without laser irradiation. The EL mechanism is suggested from the bipolar recombination of electron-hole pairs at Si nanocrystals. The improved performance of the devices was discussed.
Download full-text PDF |
Source |
|---|---|
| http://dx.doi.org/10.1364/OE.18.001144 | DOI Listing |
Publication Analysis
Top Keywords
Similar Publications
Effect of Rapid Thermal Annealing on Si-Based Dielectric Films Grown by ICP-CVD.
ACS Omega
August 2023
Belarusian State University, Kurchatov Str. 5, 220045 Minsk, Belarus.
Silicon nitride, silicon oxide, and silicon oxynitride thin films were deposited on the Si substrate by inductively coupled plasma chemical vapor deposition and annealed at 1100 °C for 3 min in an Ar environment. Silicon nitride and silicon oxide films deposited at ratios of the reactant flow rates of SiH/N = 1.875 and SiH/NO = 3, respectively, were Si-rich, while Si excess for the oxynitride film (SiH/N/NO = 3:2:2) was not found.
View Article and Find Full Text PDFEnhanced Red Emission from Amorphous Silicon Carbide Films via Nitrogen Doping.
Micromachines (Basel)
November 2022
School of Materials Science and Engineering, Hanshan Normal University, Chaozhou 521041, China.
The enhanced red photoluminescence (PL) from Si-rich amorphous silicon carbide (a-SiC) films was analyzed in this study using nitrogen doping. The increase in nitrogen doping concentration in films results in the significant enhancement of PL intensity by more than three times. The structure and bonding configuration of films were investigated using Raman and Fourier transform infrared absorption spectroscopies, respectively.
View Article and Find Full Text PDFUnderstanding Electrical Conduction and Nanopore Formation During Controlled Breakdown.
Small
September 2021
Instituto de Tecnologia Química e Biológica António Xavier, Universidade Nova de Lisboa, Av. da República, Oeiras, 2780-157, Portugal.
Controlled breakdown has recently emerged as a highly appealing technique to fabricate solid-state nanopores for a wide range of biosensing applications. This technique relies on applying an electric field of approximately 0.4-1 V nm across the membrane to induce a current, and eventually, breakdown of the dielectric.
View Article and Find Full Text PDFCorrelation between composition, microstructure, and emission properties in Nd-doped Si-rich Si oxynitride films: investigation into the nature of the sensitizer.
Nanotechnology
January 2019
Institute of Materials, China Academy of Engineering Physics, 610200 Chengdu, Sichuan, People's Republic of China.
Rare earth (RE) ions doped in Si-based materials, compatible with Si technology, are promising compounds with regards to optical communication and energy conversion. In this article, we show the emission properties of Nd-doped Si-rich Si oxynitride (Nd-SRSON) films, and their dependence on the dangling bond density and the nature of the sensitizer. These films were prepared by reactive magnetron sputtering and post-annealing.
View Article and Find Full Text PDFLow temperature thermal ALD of a SiN interfacial diffusion barrier and interface passivation layer on SiGe(001) and SiGe(110).
J Chem Phys
February 2017
Materials Science and Engineering Program, University of California, San Diego, La Jolla, California 92093, USA.
Atomic layer deposition of a silicon rich SiN layer on SiGe(001), SiGe(001), and SiGe(110) surfaces has been achieved by sequential pulsing of SiCl and NH precursors at a substrate temperature of 285 °C. XPS spectra show a higher binding energy shoulder peak on Si 2p indicative of SiONCl bonding while Ge 2p and Ge 3d peaks show only a small amount of higher binding energy components consistent with only interfacial bonds, indicating the growth of SiON on the SiGe surface with negligible subsurface reactions. Scanning tunneling spectroscopy measurements confirm that the SiN interfacial layer forms an electrically passive surface on p-type SiGe(001), SiGe(110), and SiGe(001) substrates as the surface Fermi level is unpinned and the electronic structure is free of states in the band gap.
View Article and Find Full Text PDFWant AI Summaries of new PubMed Abstracts delivered to your In-box?
Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!