Quantum confined Stark effect of InGaN/GaN multi-quantum disks grown on top of GaN nanorods.

Nanotechnology

Quantum Functional Semiconductor Research Center, Department of Physics, Dongguk University, Seoul, Korea.

Published: March 2010

AI Article Synopsis

  • The study examines the quantum confined Stark effect in a specific multi-quantum disk structure made of In(x)Ga(1-x)N/GaN located at the tip of a GaN nanorod using micro-photoluminescence.
  • A notable emission line at 3.26 eV was detected, showing a blue-shift in energy as excitation power increased, indicating the presence of the quantum confined Stark effect.
  • Both the blue-shift and the emission intensity reached a saturation point at higher excitation powers, and the temperature dependence of the 3.26 eV emission was also explored.

Article Abstract

We have investigated, using micro-photoluminescence, the quantum confined Stark effect in an In(x)Ga(1-x)N/GaN multi-quantum disk structure at the tip of a single GaN nanorod. A strong and sharp emission line from the In(x)Ga(1-x)N/GaN quantum disks near 3.26 eV was observed. The peak energy of the emission line was observed to blue-shift with increasing excitation power, indicating a quantum confined Stark effect. Furthermore, both the blue-shift and the intensity of the emission saturate with increasing excitation power. The temperature-dependence of the 3.26 eV emission line has also been investigated.

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Source
http://dx.doi.org/10.1088/0957-4484/21/11/115401DOI Listing

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