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Optical constants manipulation of formamidinium lead iodide perovskites: ellipsometric and spectroscopic twigging.
Energy Adv
October 2024
BCMaterials, Basque Center for Materials, Applications, and Nanostructures UPV/EHU Science Park 48940 Leioa Spain
Unraveling the knowledge of the complex refractive index and photophysical properties of the perovskite layer is paramount to uncovering the physical process that occurs in a perovskite solar cell under illumination. Herein, we probed the optical and photophysical properties of FAPbI (FAPI) and CsFAPbI (CsFAPI) thin films deposited from pre-synthesized powder, by the spectroscopic ellipsometer and time-resolved fluorescence spectra. We determined the complex refractive index of perovskite films by fitting the measured spectroscopic ellipsometer data with the three-oscillator Tauc-Lorentz (T-L) model.
View Article and Find Full Text PDFElectrical, Optical and Thermal Properties of Ge-Si-Sn-O Thin Films.
Materials (Basel)
July 2024
Division of Physics, Engineering, Mathematics and Computer Science, and Optical Science Center for Applied Research, Delaware State University, Dover, DE 19901, USA.
This work evaluates the electrical, optical and thermal properties of Sn-doped GeSiO thin films for use as microbolometer sensing materials. The films were prepared using a combination of a radio frequency (RF) magnetron and direct current (DC) sputtering using a Kurt J Leskar Proline PVD-75 series sputtering machine. Thin films were deposited in an O+Ar environment at a chamber pressure of 4 mTorr.
View Article and Find Full Text PDFDielectric Response of Different Alcohols in Water-Rich Binary Mixtures from THz Ellipsometry.
Int J Mol Sci
April 2024
Department of Physics "E. Pancini", University of Naples "Federico II", Complesso MSA, 80126 Naples, Italy.
We report a study on the hydrogen bonding mechanisms of three aliphatic alcohols (2-propanol, methanol, and ethanol) and one diol (ethylene glycol) in water solution using a time-domain ellipsometer in the THz region. The dielectric response of the pure liquids is nicely modeled by the generalized Debye-Lorentz equation. For binary mixtures, we analyze the data using a modified effective Debye model, which considers H-bond rupture and reformation dynamics and the motion of the alkyl chains and of the OH groups.
View Article and Find Full Text PDFArticle Synopsis
- The refractive index is essential for designing optical and photonic devices, but accurate data for low temperatures is scarce.
- Researchers created a homemade spectroscopic ellipsometer to measure the refractive index of GaAs across a range of temperatures (4 K to 295 K) and wavelengths (700 nm to 1000 nm) with minimal error.
- This study fills the gap in available data for GaAs at cryogenic temperatures, offering reliable reference data for future semiconductor device development.
Thickness Mapping and Layer Number Identification of Exfoliated van der Waals Materials by Fourier Imaging Micro-Ellipsometry.
ACS Nano
May 2023
Racah Institute of Physics, The Hebrew University of Jerusalem, Jerusalem 9190401, Israel.
As performance of van der Waals heterostructure devices is governed by the nanoscale thicknesses and homogeneity of their constituent mono- to few-layer flakes, accurate mapping of these properties with high lateral resolution becomes imperative. Spectroscopic ellipsometry is a promising optical technique for such atomically thin-film characterization due to its simplicity, noninvasive nature and high accuracy. However, the effective use of standard ellipsometry methods on exfoliated micron-scale flakes is inhibited by their tens-of-microns lateral resolution or slow data acquisition.
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