We studied the pulse energy threshold of surface nano-/micro-morphology modifications by irradiating Si, GaAs, GaP, InP, Cu and Ti surfaces with 100 fs laser pulses at a wavelength of 800 nm in air and in water. We found that the laser pulse energy thresholds required for the permanent modification in water are up to 30% lower than those in air. Different non-equilibrium dynamics processes of the surface melting layer cause the different thresholds in water and in air.
Download full-text PDF |
Source |
---|---|
http://dx.doi.org/10.1088/0957-4484/21/7/075304 | DOI Listing |
Nanotechnology
February 2010
Department of Physics and Applied Physics, and Nanomanufacturing Center, University of Massachusetts Lowell, One University Avenue, Lowell, MA 01854, USA.
We studied the pulse energy threshold of surface nano-/micro-morphology modifications by irradiating Si, GaAs, GaP, InP, Cu and Ti surfaces with 100 fs laser pulses at a wavelength of 800 nm in air and in water. We found that the laser pulse energy thresholds required for the permanent modification in water are up to 30% lower than those in air. Different non-equilibrium dynamics processes of the surface melting layer cause the different thresholds in water and in air.
View Article and Find Full Text PDFEnter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!