Severity: Warning
Message: file_get_contents(https://...@pubfacts.com&api_key=b8daa3ad693db53b1410957c26c9a51b4908&a=1): Failed to open stream: HTTP request failed! HTTP/1.1 429 Too Many Requests
Filename: helpers/my_audit_helper.php
Line Number: 176
Backtrace:
File: /var/www/html/application/helpers/my_audit_helper.php
Line: 176
Function: file_get_contents
File: /var/www/html/application/helpers/my_audit_helper.php
Line: 250
Function: simplexml_load_file_from_url
File: /var/www/html/application/helpers/my_audit_helper.php
Line: 3122
Function: getPubMedXML
File: /var/www/html/application/controllers/Detail.php
Line: 575
Function: pubMedSearch_Global
File: /var/www/html/application/controllers/Detail.php
Line: 489
Function: pubMedGetRelatedKeyword
File: /var/www/html/index.php
Line: 316
Function: require_once
High aspect ratio Zinc Oxide (ZnO) nanowires (NWs) were synthesized by template based one-step electrochemical deposition (OSECD) technique. The electro-reduction of hydroxide ions in the presence of Zn(2+) ions within Zn(NO(3))(2) is involved in the growth of ultra thin NWs arrays. Field Emission Scanning Electron Microscopy (FESEM) images revealed that the growth rates of different crystal faces, (0 0 0 1) and (0 0 0 1), were different at different deposition potential for the high aspect ratios ZnO NWs arrays. The n-type semiconductor conductivity of ZnO NWs was ascertained by a Hot-Probe approach. X-ray diffraction results demonstrated that the grown ZnO NWs had wurtzite crystal structure with unit cell parameters a=2.93 A, c=5.45 A and a deterioration of preferred (1 0 1) orientation is observed at more negative deposition potentials. Small angle X-ray scattering (SAXS) results evidenced that the NW arrays grown at -1.2 V have higher fraction of larger crystallites. Micro-Raman spectroscopy analysis showed that the variation in E(2) (high) vibration mode at 435 cm(-1) is coupled with an increase in electro acceptor oxygen atoms incorporated within ZnO NWs at -1.2 V.
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Source |
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http://dx.doi.org/10.1016/j.jcis.2009.12.026 | DOI Listing |
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