Phase-change InSbTe (IST) single crystalline nanowires were successfully synthesized at a low temperature of 250 degrees C by metalorganic chemical vapor deposition (MOCVD). The growth of IST nanowires by MOCVD, at very high working pressure, was governed by supersaturation. The growth mechanism of the IST nanowires by MOCVD is addressed in this paper. Under high working pressure, the InTe phase was preferentially formed on the TiAlN electrode, and the InTe protrusions were nucleated on the InTe films under high supersaturation. The Sb was continuously incorporated into the InTe protrusions, which was grown as an IST nanowire. Phase-change-induced memory switching was realized in IST nanowires with a threshold voltage of about 1.6 V. The ability to grow IST nanowires at low temperature by MOCVD should open opportunities for investigation of the nanoscale phase-transition phenomena.
Download full-text PDF |
Source |
|---|---|
| http://dx.doi.org/10.1021/nl903188z | DOI Listing |
Publication Analysis
Top Keywords
Similar Publications
F and rare V doped cobalt hydroxide hybrid nanostructures: excellent OER activity with ultralow overpotential.
Dalton Trans
April 2023
School of Chemical & Biotechnology, SASTRA Deemed University, Thanjavur-613401, Tamil Nadu, India.
Highly efficient and stable Earth abundant transition metal electrocatalysts are in great demand for the oxygen evolution reaction (OER), a bottleneck process involved in the water splitting reaction and metal-air batteries. Herein, we have demonstrated a single step direct fabrication of cobalt hydroxide (Co(OH)) nanowires doped with vanadium(V) in a less stable +4 oxidation state and fluoride (F) ions (V-Co(OH)) on a carbon cloth electrode that showed highly enhanced OER activity under alkaline conditions. V-Co(OH) nanowires synthesized under the optimized conditions produced excellent OER activity with an ultralow overpotential of 136 mV at 10 mA cm (scan rate 1 mV s), a small Tafel slope (51.
View Article and Find Full Text PDFMajorana-like Coulomb spectroscopy in the absence of zero-bias peaks.
Nature
December 2022
Institute of Science and Technology Austria, Klosterneuburg, Austria.
Hybrid semiconductor-superconductor devices hold great promise for realizing topological quantum computing with Majorana zero modes. However, multiple claims of Majorana detection, based on either tunnelling or Coulomb blockade (CB) spectroscopy, remain disputed. Here we devise an experimental protocol that allows us to perform both types of measurement on the same hybrid island by adjusting its charging energy via tunable junctions to the normal leads.
View Article and Find Full Text PDFNontopological zero-bias peaks in full-shell nanowires induced by flux-tunable Andreev states.
Science
July 2021
Institute of Science and Technology Austria, Am Campus 1, 3400 Klosterneuburg, Austria.
A semiconducting nanowire fully wrapped by a superconducting shell has been proposed as a platform for obtaining Majorana modes at small magnetic fields. In this study, we demonstrate that the appearance of subgap states in such structures is actually governed by the junction region in tunneling spectroscopy measurements and not the full-shell nanowire itself. Short tunneling regions never show subgap states, whereas longer junctions always do.
View Article and Find Full Text PDFA Magnetoresistive Tactile Sensor for Harsh Environment Applications.
Sensors (Basel)
May 2016
Computer, Electrical and Mathematical Sciences and Engineering Division (CEMSE), King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia.
A magnetoresistive tactile sensor is reported, which is capable of working in high temperatures up to 140 °C. Hair-like bioinspired structures, known as cilia, made out of permanent magnetic nanocomposite material on top of spin-valve giant magnetoresistive (GMR) sensors are used for tactile sensing at high temperatures. The magnetic nanocomposite, consisting of iron nanowires incorporated into the polymer polydimethylsiloxane (PDMS), is very flexible, biocompatible, has high remanence, and is also resilient to antagonistic sensing ambient.
View Article and Find Full Text PDFPhase-change InSbTe nanowires grown in situ at low temperature by metal-organic chemical vapor deposition.
Nano Lett
February 2010
School of Nano Science and Technology, ChungnamNational University, Daeduk Science Town, 305-764, Daejeon, Korea.
Phase-change InSbTe (IST) single crystalline nanowires were successfully synthesized at a low temperature of 250 degrees C by metalorganic chemical vapor deposition (MOCVD). The growth of IST nanowires by MOCVD, at very high working pressure, was governed by supersaturation. The growth mechanism of the IST nanowires by MOCVD is addressed in this paper.
View Article and Find Full Text PDFWant AI Summaries of new PubMed Abstracts delivered to your In-box?
Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!