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http://dx.doi.org/10.1126/science.1183659 | DOI Listing |
Nanoscale
January 2025
Transport at Nanoscale Interfaces Laboratory, Empa, Swiss Federal Laboratories for Materials Science and Technology, 8600 Dübendorf, Switzerland.
Magic-angle twisted bilayer graphene (TBLG) has emerged as a versatile platform to explore correlated electron phases driven primarily by low-energy flat bands in moiré superlattices. While techniques for controlling the twist angle between graphene layers have spurred rapid experimental progress, understanding the effects of doping inhomogeneity on electronic transport in correlated electron systems remains challenging. In this work, we investigate the interplay of confinement and doping inhomogeneity on the electrical transport properties of TBLG by leveraging device dimensions and twist angles.
View Article and Find Full Text PDFExpert Rev Proteomics
January 2025
Skolkovo Institute of Science and Technology, Moscow, Russian Federation.
Introduction: Identifying early risks of developing Alzheimer's disease (AD) is a major challenge as the number of patients with AD steadily increases and requires innovative solutions. Current molecular diagnostic modalities, such as cerebrospinal fluid (CSF) testing and positron emission tomography (PET) imaging, exhibit limitations in their applicability for large-scale screening. In recent years, there has been a marked shift toward the development of blood plasma-based diagnostic tests, which offer a more accessible and clinically viable alternative for widespread use.
View Article and Find Full Text PDFNatl Sci Rev
January 2025
State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012, China.
The intentional manipulation of carrier characteristics serves as a fundamental principle underlying various energy-related and optoelectronic semiconductor technologies. However, achieving switchable and reversible control of the polarity within a single material to design optimized devices remains a significant challenge. Herein, we successfully achieved dramatic reversible p-n switching during the semiconductor‒semiconductor phase transition in BiI via pressure, accompanied by a substantial improvement in their photoelectric properties.
View Article and Find Full Text PDFNatl Sci Rev
January 2025
Division of Advanced Materials Engineering, College of Engineering, Research Center for Advanced Materials Development (RCAMD), Jeonbuk National University (JBNU), Jeonju 54896, South Korea.
Ever-increasing demand for efficient optoelectronic devices with a small-footprinted on-chip light emitting diode has driven their expansion in self-emissive displays, from micro-electronic displays to large video walls. InGaN nanowires, with features like high electron mobility, tunable emission wavelengths, durability under high current densities, compact size, self-emission, long lifespan, low-power consumption, fast response, and impressive brightness, are emerging as the choice of micro-light emitting diodes (µLEDs). However, challenges persist in achieving high crystal quality and lattice-matching heterostructures due to composition tuning and bandgap issues on substrates with differing crystal structures and high lattice mismatches.
View Article and Find Full Text PDFJ Phys Condens Matter
January 2025
School of Physics, University of Hyderabad, Prof. C. R. Rao Road, Gachibowli, Hyderabad 500046, India.
The Josephson diode effect (JDE), characterized by asymmetric critical currents in a Josephson junction, has drawn considerable attention in the field of condensed matter physics. We investigate the conditions under which JDE can manifest in a one-dimensional Josephson junction composed of a spin-orbit-coupled quantum wire with an applied Zeeman field, connected between two superconductors (SCs). Our study reveals that while spin-orbit coupling (SOC) and a Zeeman field in the quantum wire are not sufficient to induce JDE when the SCs are purely singlet, introduction of triplet pairing in the SCs leads to the emergence of JDE.
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