Signal transmission experiments were performed at 170 Gbit/s in an integrated Al(2)O(3):Er(3+) waveguide amplifier to investigate its potential application in high-speed photonic integrated circuits. Net internal gain of up to 11 dB was measured for a continuous-wave 1532 nm signal under 1480 nm pumping, with a threshold pump power of 4 mW. A differential group delay of 2 ps between the TE and TM fundamental modes of the 5.7-cm-long amplifier was measured. When selecting a single polarization open eye diagrams and bit error rates equal to those of the transmission system without the amplifier were observed for a 1550 nm signal encoded with a 170 Gbit/s return-to-zero pseudo-random 2(7)-1 bit sequence.
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http://dx.doi.org/10.1364/OE.17.022201 | DOI Listing |
We experimentally demonstrate a dual-polarized, single-input single-output (SISO) photonic-electronic integrated system, achieving a single-wavelength data rate of 400 Gbit/s at 220 GHz. This system is based on a self-developed IQ mixer, orthomode transducers (OMTs), and a dual-polarized multiplexing antenna (DPMA). The IQ mixer front-end exhibits a conversion loss of over 14 dB within a 30 GHz bandwidth, and cross talk between IQ channels is better than 15 dB for most frequency points.
View Article and Find Full Text PDFA receive-diversity-aided power-fading compensation (RDA-PFC) scheme is proposed and demonstrated to eliminate the chromatic dispersion (CD)-induced power fading for C-band double-sideband (DSB) intensity modulation and direct detection (IM/DD) orthogonal frequency division multiplexing (OFDM) systems. By combining the responses before and after a dispersive element using a maximal-ratio combining (MRC) algorithm, the CD-induced power fading dips within the signal bandwidth of around 50 GHz can be effectively compensated for, which results in an up to 17.6-dB signal-to-noise ratio (SNR) improvement for the fading subcarriers after transmission over 10 km of standard single-mode fiber (SSMF).
View Article and Find Full Text PDFSensors (Basel)
March 2023
Beijing Key Laboratory of Work Safety Intelligent Monitoring, Beijing University of Posts and Telecommunications, Beijing 100876, China.
D-band (110-170 GHz) is a promising direction for the future of 6th generation mobile networks (6G) for high-speed mobile communication since it has a large available bandwidth, and it can provide a peak rate of hundreds of Gbit/s. Compared with the traditional electrical approach, photonics millimeter wave (mm-wave) generation in D-band is more practical and effectively overcomes the bottleneck of electrical devices. However, long-distance D-band wireless transmission is still limited by some key factors such as large absorption loss and nonlinear noises.
View Article and Find Full Text PDFA high quantum efficiency (QE) and high-speed silicon nitride () waveguide coupled germanium-on-silicon photodetector (Ge-on-Si PD) is presented. The proposed device is fabricated in a commercial 90 nm silicon photonics process platform. By decreasing the spacing between the tapered waveguide and the bottom Si to 200 nm and the thickness to 300 nm, the QE is significantly improved.
View Article and Find Full Text PDFWe evaluate improvement in the performance of the optical transmission systems operating with the continuous nonlinear Fourier spectrum by the artificial neural network equalisers installed at the receiver end. We propose here a novel equaliser designs based on bidirectional long short-term memory (BLSTM) gated recurrent neural network and compare their performance with the equaliser based on several fully connected layers. The proposed approach accounts for the correlations between different nonlinear spectral components.
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