The authors demonstrate readout of electrically detected magnetic resonance at radio frequencies by means of a LCR tank circuit. Applied to a silicon field-effect transistor at millikelvin temperatures, this method shows a 25-fold increased signal-to-noise ratio of the conduction band electron spin resonance and a higher operational bandwidth of >300 kHz compared to the kilohertz bandwidth of conventional readout techniques. This increase in temporal resolution provides a method for future direct observations of spin dynamics in the electrical device characteristics.
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