Piezoresistive cantilevers fabricated from doped silicon or metal films are commonly used for force, topography, and chemical sensing at the micro- and macroscales. Proper design is required to optimize the achievable resolution by maximizing sensitivity while simultaneously minimizing the integrated noise over the bandwidth of interest. Existing analytical design methods are insufficient for modeling complex dopant profiles, design constraints, and nonlinear phenomena such as damping in fluid. Here we present an optimization method based on an analytical piezoresistive cantilever model. We use an existing iterative optimizer to minimimize a performance goal, such as minimum detectable force. The design tool is available as open source software. Optimal cantilever design and performance are found to strongly depend on the measurement bandwidth and the constraints applied. We discuss results for silicon piezoresistors fabricated by epitaxy and diffusion, but the method can be applied to any dopant profile or material which can be modeled in a similar fashion or extended to other microelectromechanical systems.
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http://dx.doi.org/10.1063/1.3224965 | DOI Listing |
Rev Sci Instrum
July 2024
Department of Physics, Pohang University of Science and Technology, Pohang 37673, South Korea.
We present a low-temperature magnetic force microscope (MFM) incorporating a piezoresistive cantilever and a dual-range scanner for experiments across a wide temperature range from cryogenic levels to room temperature. The piezoresistor-based MFM eliminates the need for optical readjustment, typically required due to thermal expansion at varying temperatures, thereby providing a more stable and precise measurement environment. The integration of a dual scanner system expands the versatility of scanning operations, enabling accurate sample positioning for detailed exploration of magnetic and superconducting properties under diverse thermal conditions.
View Article and Find Full Text PDFSensors (Basel)
April 2024
Laboratory for Emerging Nanometrology (LENA), Institute of Semiconductor Technology (IHT), Technische Universität Braunschweig, 38106 Braunschweig, Germany.
Electrothermal piezoresistive resonant cantilever sensors have been fabricated with embedded actuating (heating resistor) and sensing (piezo resistors) parts, with the latter configured in a Wheatstone bridge circuit. Due to the close spacing between these two elements, a direct thermal parasitic effect on the resonant sensor during the actuating-sensing process leads to asymmetric amplitude and reversing phase spectral responses. Such a condition affects the precise determination of the cantilever's resonant frequency, .
View Article and Find Full Text PDFSensors (Basel)
October 2023
Space Technology Centre, AGH University of Science and Technology, 30-059 Krakow, Poland.
MXenes are a new family of two-dimensional (2D) nanomaterials. They are inorganic compounds of metal carbides/nitrides/carbonitrides. Titanium carbide MXene (Ti3C2-MXene) was the first 2D nanomaterial reported in the MXene family in 2011.
View Article and Find Full Text PDFMicromachines (Basel)
July 2023
School of Mechanical Engineering, Shaanxi University of Technology, Hanzhong 723001, China.
Micromachines (Basel)
April 2023
School of Integrated Circuits, Peking University, Beijing 100871, China.
In this study, an electrostatic force-driven on-chip tester consisting of a mass with four guided cantilever beams was employed to extract the process-related bending stiffness and piezoresistive coefficient in-situ for the first time. The tester was manufactured using the standard bulk silicon piezoresistance process of Peking University, and was tested on-chip without additional handling. In order to reduce the deviation from process effects, the process-related bending stiffness was first extracted as an intermediate value, namely, 3590.
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