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http://dx.doi.org/10.1364/ol.19.001900 | DOI Listing |
Heliyon
January 2025
Department of Physics, Facility of Science, King Abdulaziz University, Jeddah, Saudi Arabia.
The influence of variations in indium concentration and temperature on threshold current density (J) in In Ga As/GaAs ( = 0, 0.8 and 0.16) quantum dot (QD) laser diodes - synthesized via molecular beam epitaxy (MBE) with three distinct indium concentrations on GaAs (001) substrates - was meticulously examined.
View Article and Find Full Text PDFA high-security, high-speed stream cipher for physical-layer-secure optical communication, based on optical-carrier-induced private chaos synchronization and RC4 algorithm, is proposed and numerically demonstrated. The high security and speed are achieved by combining physical true random numbers generated from synchronized chaos, used as the key for random DNA coding, with the RC4 pseudo-random numbers. Moreover, no third-party signal is required as the optical carrier itself serves as the common drive for chaos synchronization in semiconductor lasers.
View Article and Find Full Text PDFAppl Spectrosc
January 2025
School of Mathematics Physics and Finance, Anhui Polytechnic University, Wuhu, China.
A compact dual-gas sensor based on the two near-infrared distributed feedback diode lasers and a multipass cell has been established for the simultaneous measurement of methane (CH) and acetylene (CH). The time division multiplexing calibration-free direct absorption spectroscopy is used to eliminate the cross interference in the application of multicomponent gas sensors. A wavelength stabilization technique based on the proportion integration differentiation feedback control is developed to suppress laser wavelength drift and an H-infinity (H) filter algorithm to reduce the system noise.
View Article and Find Full Text PDFHolographically designed aperiodic lattices (ALs) have proven to be an exciting engineering technique for achieving electrically switchable single- or multi-frequency emissions in terahertz (THz) semiconductor lasers. Here, we employ the nonlinear transfer matrix modeling method to investigate multi-wavelength nonlinear (sum- or difference-) frequency generation within an integrated THz (idler) laser cavity that also supports optical (pump and signal) waves. The laser cavity includes an aperiodic lattice, which engineers the idler photon lifetimes and effective refractive indices.
View Article and Find Full Text PDFWe demonstrate externally modulated widely tunable lasers co-integrated with semiconductor optical amplifiers (SOAs) heterogeneously integrated on silicon. The widely tunable laser enables continuous single-mode operation over a tuning range of approximately 40 nm, with a side-mode suppression ratio (SMSR) of at least 50 dB and an average waveguide-coupled optical power of 5 mW. The integrated electro-absorption modulator (EAM) exhibits an extinction ratio (ER) of 16 dB when reversed biased at -2 V.
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