The preparation of conductive and transparent gold/silver nanowire mesh films is reported. The nanowires formed after the reduction of the metal ions was triggered and a thin growth solution film was spread on a substrate. Metal reduction progressed within a template of a highly concentrated surfactant liquid crystalline mesostructure formed on the substrate during film drying to form ordered bundles of ultrathin nanowires. The films exhibited metallic conductivity over large areas, high transparency, and flexibility.
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http://dx.doi.org/10.1021/nl902458j | DOI Listing |
Sensors (Basel)
January 2025
School of Optical-Electrical and Computer Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China.
We propose a non-magnetic transparent heating film based on silver nanowires (Ag-NWs) for application in spin-exchange relaxation-free (SERF) magnetic field measurement devices. To achieve ultra-high sensitivity in atomic magnetometers, the atoms within the alkali metal vapor cell must be maintained in a stable and uniform high-temperature environment. Ag-NWs, as a transparent conductive material with exceptional electrical conductivity, are well suited for this application.
View Article and Find Full Text PDFACS Appl Mater Interfaces
January 2025
Department of Microelectronic Science and Engineering, Ningbo University, Ningbo 315000, China.
Power generation and architectural beauty are equally important for designing efficient and esthetically appealing bifacial perovskite solar cells (PSCs). In this work, efficient and multicolored p-i-n-structured PSCs are achieved by taking advantage of a dielectric/metal/dielectric (DMD)-type (MoO/Ni/Ag/MoO) transparent counter electrode. The MoO/Ni underlayer effectively promotes the formation of a continuous and conductive ultrathin Ag transparent film, especially the 1 nm Ni seed layer adjusts the interface energy level between perovskite/MoO and Ag, resulting in Ohmic contact of the electrode to promote charge extraction and collection.
View Article and Find Full Text PDFMicromachines (Basel)
November 2024
Southwest Institute of Technology and Engineering, Chongqing 400039, China.
High-k metal oxides are gradually replacing the traditional SiO dielectric layer in the new generation of electronic devices. In this paper, we report the production of five-element high entropy metal oxides (HEMOs) dielectric films by solution method and analyzed the role of each metal oxide in the system by characterizing the film properties. On this basis, we found optimal combination of (AlGaTiYZr)O with the best dielectric properties, exhibiting a low leakage current of 1.
View Article and Find Full Text PDFLangmuir
January 2025
Information Device Science Laboratory, Division of Materials Science, Nara Institute of Science and Technology, Ikoma City, Nara 630-0192, Japan.
Adv Mater
January 2025
State Key Laboratory of Luminescent Materials and Devices, Guangdong Provincial Key Laboratory of Fiber Laser Materials and Applied Techniques, School of Physics and Optoelectronics, South China University of Technology, Guangzhou, 510641, China.
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