AI Article Synopsis
- Researchers used scanning X-ray diffraction microscopy to study GaAs nanorods, which were grown without seeds through circular openings in a SiN(x) mask.
- The X-ray technique helped determine the strain state of individual nanorods and revealed detailed morphological characteristics.
- There were notable differences in shape, size, and strain state between rods located at the center and those at the edge of the periodic array.
Article Abstract
Using scanning X-ray diffraction microscopy with a spot size of 220 x 600 nm, it was possible to inspect individual GaAs nanorods grown seed-free through circular openings in a SiN(x) mask in a periodic array with 3 microm spacing on GaAs[111]B. The focused X-ray beam allows the determination of the strain state of individual rods and, in combination with coherent diffraction imaging, it was also possible to characterize morphological details. Rods grown either in the centre or at the edge of the array show significant differences in shape, size and strain state.
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| http://dx.doi.org/10.1107/S0909049509032889 | DOI Listing |
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